AMMC-5620-W10 Avago Technologies US Inc., AMMC-5620-W10 Datasheet

IC MMIC AMP GAAS HI GAIN 6-20GHZ

AMMC-5620-W10

Manufacturer Part Number
AMMC-5620-W10
Description
IC MMIC AMP GAAS HI GAIN 6-20GHZ
Manufacturer
Avago Technologies US Inc.
Type
Gain Amplifierr
Datasheet

Specifications of AMMC-5620-W10

Function
Amplifier
Frequency Range
6GHz To 20GHz
Noise Figure Typ
4.2dB
Power Dissipation Pd
1W
Supply Current
105mA
Supply Voltage Range
5V
Frequency Max
20GHz
Gain
19dB
Rf Type
General Purpose
Number Of Channels
1
Frequency (max)
20GHz
Output Power
15@20000MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (typ)
5V
Package Type
Chip
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1849
AMMC-5620-W10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AMMC-5620-W10
Manufacturer:
Avago Technologies
Quantity:
135
Part Number:
AMMC-5620-W10
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AMMC-5620
6 - 20 GHz High Gain Amplifier
Data Sheet
Description
Avago Technologies’ AMMC-5620 MMIC is a GaAs wide-
band amplifier designed for medium output power and
high gain over the 6 - 20 GHz frequency range. The 3
cascaded stages provide high gain while the single bias
supply offers ease of use. It is fabricated using a PHEMT
integrated circuit process. The RF input and output ports
have matching circuitry for use in
The backside of the chip is both RF and DC ground. This
helps simplify the assembly process and reduces assembly
related performance variations and costs. For improved
reliability and moisture protection, the die is passivated
at the active areas. The MMIC is a cost effective alternative
to hybrid (discrete FET) amplifiers that require complex
tuning and assembly processes.
AMMC-5620 Absolute Maximum Ratings
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Symbol
V
I
P
P
T
T
T
T
DD
ch
stg
max
DC
in
b
DD
Note: These devices are ESD sensitive. The following precautions are strongly recommended.
Ensure that an ESD approved carrier is used when dice are transported from one destination to
another. Personal grounding is to be worn at all times when handling these devices
Parameters/Conditions
Drain Supply Voltage
Total Drain Current
DC Power Dissipation
RF CW Input Power
Channel Temp.
Operating Backside Temp.
Storage Temp.
Maximum Assembly Temp. (60 sec max)
50-Ω
[1]
environments.
Chip Size: 1410 x 1010 µm (55.5 x 39.7 mils)
Chip Size Tolerance: ± 10 µm (± 0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger)
Features
• Frequency Range: 6 - 20 GHz
• High Gain: 19 dB Typical
• Output Power: 15dBm Typical
• Input and Output Return Loss: < -10 dB
• Positive Gain Slope: + 0.21dB/GHz Typical
• Single Supply Bias: 5 V @ 95 mA Typical
Applications
• General purpose, wide-band amplifier in communica-
• High gain amplifier
tion systems or microwave instrumentation
Units
V
mA
W
dBm
° C
° C
° C
° C
Min.
- 55
- 65
Max.
7.5
135
1.0
20
+150
+165
+300

Related parts for AMMC-5620-W10

AMMC-5620-W10 Summary of contents

Page 1

... AMMC-5620 GHz High Gain Amplifier Data Sheet Description Avago Technologies’ AMMC-5620 MMIC is a GaAs wide- band amplifier designed for medium output power and high gain over the GHz frequency range. The 3 cascaded stages provide high gain while the single bias supply offers ease of use ...

Page 2

... AMMC-5620 DC Specifications/Physical Properties Symbol Parameters and Test Conditions V Recommended Drain Supply Current DD I Total Drain Supply Current ( Total Drain Supply Current ( [3] Thermal Resistance ch-b (Backside temperature (T Notes: 1. Backside temperature Tb = 25°C unless otherwise noted 2. Channel-to-backside Thermal Resistance (qch-b) = 47°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis- tance at backside temperature (Tb) = 25° ...

Page 3

... AMMC-5620 Typical Performances (T =25°C, V chuck FREQUENCY (GHz) Figure 1. Gain 0 -10 -20 -30 - FREQUENCY (GHz) Figure 4.Output Return Loss AMMC-5620 Typical Performances vs. Supply Voltage ( Vdd=4V Vdd=5V Vdd= FREQUENCY (GHz) Figure 7. Gain and Voltage 3 =5V mA, Zo=50Ω -10 -20 -30 -40 -50 -60 - FREQUENCY (GHz) Figure 2. Isolation ...

Page 4

... AMMC-5620 Typical Performances vs. Supply Voltage (cont -10 -20 Vdd=4V Vdd=5V Vdd=6V -30 - FREQUENCY (GHz) Figure 10. Output Return Loss and Voltage AMMC-5620 Typical Performance vs. Temperature ( - FREQUENCY (GHz) Figure 12. Gain and Temperature 0 -5 -10 -15 -20 - FREQUENCY (GHz) Figure 15. Output Return Loss and Tem- perature 4 = 25°C, Zo=50Ω) ...

Page 5

... AMMC-5620 Typical Scattering Parameters S11 Freq GHz dB Mag Phase 2.00 -2.9 0.72 -147 2.50 -3.3 0.69 -168 3.00 -3.5 0.67 173 3.50 -3.7 0.65 154 4.00 -3.8 0.64 134 4.50 -4.0 0.63 111 5.00 -5.0 0.56 81 5.50 -7.7 0.41 49 6.00 -12.0 ...

Page 6

... Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions. 6 Assembly Techniques The backside of the AMMC-5620 chip is RF ground. For microstripline applications, the chip should be attached directly to the ground plane (e.g., circuit carrier or heat- sink) using electrically conductive epoxy For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it ...

Page 7

... Feedback network RF Input Matching Figure 18. AMMC-5620 Schematic To power supply AMMC-5620 RF Input Figure 19. AMMC-5620 Assembly Diagram 7 Feedback network Matching Matching 100 pF chip capacitor Gold plated shim RF Output V D1 Feedback network Matching RF Output ...

Page 8

... Figure 20. AMMC-5620 Bond Pad Locations. (dimensions in microns) Ordering Information: AMMC-5620-W10 = 10 devices per tray AMMC-5620-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. ...

Related keywords