VBO30-16NO7 IXYS, VBO30-16NO7 Datasheet - Page 2

• Manufacturer Part Number: VBO30-16NO7
• Description: DIODE BRIDGE 35A 1600V PWS-A
• Manufacturer: IXYS

Specifications of VBO30-16NO7

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 35A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Chassis Mount
• Package / Case: PWS-A
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1.6kV
• Peak Non-repetitive Surge Current (max): 440A
• Avg. Forward Curr (max): 35A
• Rev Curr: 300uA
• Forward Voltage: 2.2V
• Operating Temp Range: -40C to 150C
• Pin Count: 4
• Mounting: Screw
• Operating Temperature Classification: Automotive
• Vrrm, (v): 1600
• Vvrms, (v): 500
• Idavm, (a): 35
• @ Tc, (°c): 85
• Ifsm, 10 Ms, Tvj = 45°c, (a): 400
• Vt0, (v): 0.85
• Rt, (mohms): 12
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 2.8
• Rthjh, Per Chip, (k/w): 3.4
• Package Style: PWS-A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

P V TO T
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
200
[A]
150
100
K/W
Z th
50
I F
0
[W ]
5
4
3
2
1
Fig. 1 Forward current versus
8 0
6 0
4 0
2 0
1:T
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
2:T
0
Fig. 4 Power dissipation versus direct output current and ambient temperature
VJ
1.0
PSB 35
VJ
= 150°C
1
= 25°C
IF AV M
voltage drop per diode
1.5
1 0
0.01
V [V]
2
F
2.0
2.5
si n .1 8 0 °
re c .1 2 0 °
r e c. 60 °
r e c. 30 °
0.1
D C
3 0
3.0
t[s]
[A ]
0
1
0.57
1.12
2.23
5.57
T a m b
Fig. 2 Surge overload current per diode
0.29 0.01
I
------
I FSM
F(OV)
1.6
1.4
1.2
0.8
0.6
0.4
5 0
1
10 0
I
FSM
10
: Crest value. t: duration
= RTHCA [K/W]
100
Z thJC
10 1
Z thJK
TVJ=45°C
1/2 V RRM
0 V RRM
1 V RRM
t[ms]
400
[K ]
I
FSM
TVJ=150°C
10 2
15 0
(A)
360
T C
100
105
110
115
120
125
130
135
140
145
° C
150
50
55
60
65
70
75
80
85
90
95
10 3
10
10
I dAV
As
[A]
2
3
2
40
30
20
10
1
Fig. 3 I
0
Fig.5 Maximum forward current
T VJ=45°C
per diode or thyristor
2
50
2
dt versus time (1-10ms)
at case temperature
t [ms ]
T (°C)
C
100
4
TVJ=1 50°C
VBO 30
6
sin
rec
150
rec
rec.30°
DC
.180°
.120°
.60°
10
20100706a
200
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