VBO50-08NO7 IXYS, VBO50-08NO7 Datasheet - Page 2

• Manufacturer Part Number: VBO50-08NO7
• Description: DIODE BRIDGE 50A 800V PWS-A
• Manufacturer: IXYS

Specifications of VBO50-08NO7

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 50A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Chassis Mount
• Package / Case: PWS-A
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 800V
• Peak Non-repetitive Surge Current (max): 820A
• Avg. Forward Curr (max): 50A
• Rev Curr: 300uA
• Forward Voltage: 1.6V
• Operating Temp Range: -40C to 150C
• Pin Count: 4
• Mounting: Screw
• Operating Temperature Classification: Automotive
• Vrrm, (v): 800
• Vvrms, (v): 250
• Idavm, (a): 50
• @ Tc, (°c): 64
• Ifsm, 10 Ms, Tvj = 45°c, (a): 750
• Vt0, (v): 0.85
• Rt, (mohms): 8
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 2.6
• Rthjh, Per Chip, (k/w): 2.84
• Package Style: PWS-A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

PVTOT
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[W]
100
K/W
Z th
200
[A]
150
100
80
60
40
20
50
I F
0
4
3
2
1
0
Fig. 4 Power dissipation versus direct output current
Fig. 1 Forward current versus
PSB 55
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
1:T
2:T
IFAVM
VJ
0.5
VJ
10
and ambient temperature
= 150°
= 25°C
voltage drop per diode
1
0.01
2
1
V [V]
C
F
1.5
sin.180°
rec.120°
rec.60°
rec.30°
DC
30
0.1
2
[A]
t[s]
2.5
0
0.85
1.35
2.35
5.35
Tamb
Fig. 2 Surge overload current per diode
0.6 0.35
1
I
------
I FSM
F(OV)
1.6
1.4
1.2
0.8
0.6
0.4
50
10
1
0
I
FSM
: Crest value. t: duration
= RTHCA [K/W]
10
Z thJK
Z thJC
100
TVJ=45°C
10
1/2 V RRM
1
0 V RRM
1 V RRM
t[ms]
750
[K]
I
FSM
150
10
TVJ=150°C
(A)
2
TC
100
105
110
115
120
125
130
135
140
145
°C
150
85
90
95
670
10
3
I dAV
[A]
10
10
10
70
50
30
10
As 2
0
4
3
2
1
Fig.5 Maximum forward current
Fig. 3 I
TVJ=45°C
50
at case temperature
per diode or thyristor
2
dt versus time (1-10ms)
2
T (°C)
t [ms]
C
100
4
TVJ=150°C
sin.180°
rec.120°
re
150
VBO 50
c.60°
DC
.30°
6
200
20100706a
10
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