VUO105-12NO7 IXYS, VUO105-12NO7 Datasheet
VUO105-12NO7
Manufacturer Part Number
VUO105-12NO7
Description
BRIDGE RECT 3 PHASE 1.2KV BR-5
Manufacturer
IXYS
Datasheet
1.VUO105-12NO7.pdf
(2 pages)
Specifications of VUO105-12NO7
Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
140A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis Mount
Package / Case
PWS-C
Vrrm, (v)
1200
Vrsm, (v)
1300
Idavm, (a)
160
@ Th, (°c)
-
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
1500
Vt0, (v)
0.80
Rt, (mohms)
5.0
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
0.83
Rthjh, Per Chip, (k/w)
1.13
Package Style
PWS-C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
Q2377661
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VUO105-12NO7
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
VUO105-12NO7
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
VUO105-12NO7
Quantity:
83
Three Phase
Rectifier Bridge
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
* delivery time on request
Symbol
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
1200
1400
1600
1800
V
dAVM
FSM
2
R
T
t
VJ
VJM
stg
ISOL
F
T0
thJC
thJH
d
V
RSM
1200
1400
1600
1800
V
RRM
V
Test Conditions
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque (M5)
Terminal connection torque (M5)
typ.
Test Conditions
V
V
I
For power-loss calculations only
per diode
per module
per diode
per module
ISOL
F
C
VJ
VJ
VJ
VJ
R
R
R
R
R
R
= 150 A;
= 85°C, module
= 0
= 0
= 0
= 0
= V
= V
= 45°C;
= T
= 45°C
= T
£ 1 mA
Type
VUO 105-12NO7
VUO 105-14NO7
VUO 105-16NO7
VUO 105-18NO7*
RRM
RRM
VJM
VJM
;
;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
T
T
T
VJ
VJ
VJ
= 25°C
= T
= 25°C
VJM
Characteristic Values
~
~
~
£
£
£
Maximum Ratings
-40...+150
-40...+150
44 ± 15 %
44 ± 15 %
5 ± 15 %
5 ± 15 %
11250
11300
0.138
0.188
1500
1650
1350
1500
9120
9350
2500
3000
0.83
1.13
140
150
225
0.8
0.3
8.0
1.6
5
lb.in.
lb.in.
K/W
K/W
K/W
K/W
mW
Nm
Nm
A
A
A
A
mA
mA
V~
V~
°C
°C
°C
2
2
2
2
A
A
A
A
A
V
V
+
–
g
s
s
s
s
I
V
Dimensions in mm (1 mm = 0.0394")
Features
Applications
Advantages
dAVM
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 72873
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
= 140 A
= 1200-1800 V
~
~
~
VUO 105
-
+
1 - 2
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VUO105-12NO7 Summary of contents
Page 1
... R per diode thJH per module Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ~ ~ ~ Maximum Ratings 140 1500 ...
Page 2
... Fig. 1 Forward current versus voltage drop per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved Fig. 2 Surge overload current per diode I : Crest value. t: duration FSM VUO 105 ...