VUO125-14NO7 IXYS, VUO125-14NO7 Datasheet
VUO125-14NO7
Manufacturer Part Number
VUO125-14NO7
Description
RECT BRIDGE 3PH 1400V PWS-C
Manufacturer
IXYS
Datasheet
1.VUO125-12NO7.pdf
(2 pages)
Specifications of VUO125-14NO7
Voltage - Peak Reverse (max)
1400V
Current - Dc Forward (if)
166A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis Mount
Package / Case
PWS-C
Vrrm, (v)
1400
Vrsm, (v)
1500
Idavm, (a)
166
@ Th, (°c)
-
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
1800
Vt0, (v)
0.80
Rt, (mohms)
3.0
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
0.83
Rthjh, Per Chip, (k/w)
1.13
Package Style
PWS-C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VUO125-14NO7
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
VUO125-14NO7
Quantity:
83
Three Phase
Rectifier Bridge
* delivery time on request
Symbol
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1200
1400
1600
1800
V
dAVM
FSM
2
R
T
t
VJ
VJM
stg
ISOL
F
T0
thJC
thJH
d
RSM
V
1200
1400
1600
1800
V
RRM
V
Test Conditions
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque (M5)
Terminal connection torque (M5)
typ.
Test Conditions
V
V
I
For power-loss calculations only
per diode
per module
per diode
per module
ISOL
F
C
VJ
VJ
VJ
VJ
R
R
R
R
R
R
= 150 A;
= 85°C, module
= 0
= 0
= 0
= 0
= V
= V
= 45°C;
= T
= 45°C
= T
£ 1 mA
RRM
RRM
VJM
VJM
Type
VUO 125-12NO7
VUO 125-14NO7
VUO 125-16NO7
VUO 125-18NO7*
;
;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
T
T
T
VJ
VJ
VJ
= 25°C
= T
= 25°C
VJM
Characteristic Values
~
~
~
£
£
£
Maximum Ratings
-40...+150
-40...+150
44 ± 15 %
44 ± 15 %
5 ± 15 %
5 ± 15 %
16200
16000
12800
13600
0.138
0.188
1800
1950
1600
1800
2500
3000
0.83
1.13
166
150
225
0.3
8.0
1.3
0.8
3
lb.in.
lb.in.
K/W
K/W
K/W
K/W
mW
Nm
Nm
mA
mA
A
A
A
A
V~
V~
°C
°C
°C
2
2
2
2
A
A
A
A
A
V
V
+
g
–
s
s
s
s
I
V
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
dAVM
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 72873
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
~
= 166 A
= 1200-1800 V
~
~
VUO 125
-
+
1 - 2
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VUO125-14NO7 Summary of contents
Page 1
... R per diode thJH per module Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ~ ~ ~ Maximum Ratings 166 1800 ...
Page 2
... Fig. 1 Forward current versus voltage drop per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved Fig. 2 Surge overload current per diode I : Crest value. t: duration FSM VUO 125 ...