SD603C22S20C Vishay, SD603C22S20C Datasheet - Page 8

• Manufacturer Part Number: SD603C22S20C
• Description: DIODE FAST REC 2200V 600A E-PUK
• Manufacturer: Vishay

Specifications of SD603C22S20C

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 2.97V @ 1885A
• Current - Reverse Leakage @ Vr: 45mA @ 2200V
• Current - Average Rectified (io) (per Diode): 600A
• Voltage - Dc Reverse (vr) (max): 2200V (2.2kV)
• Reverse Recovery Time (trr): 2µs
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: Single
• Mounting Type: Chassis Mount
• Package / Case: B-43, PUK
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 2200 V
• Forward Voltage Drop: 2.97 V
• Recovery Time: 2000 ns
• Forward Continuous Current: 600 A
• Max Surge Current: 8715 A
• Reverse Current Ir: 45000 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Reverse Voltage Vrrm Max: 2.2kV
• Forward Current If(av): 600A
• Forward Voltage Vf Max: 2.97V
• Reverse Recovery Time Trr Max: 2µs
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *SD603C22S20C; VS-SD603C22S20C; VS-SD603C22S20C; VSSD603C22S20C; VSSD603C22S20C

SD603C..C Series
Vishay High Power Products
www.vishay.com
8
1E 4
1E 3
1E 2
1E 1
1E4
1E3
1E2
1E1
1 E 1
1E1
tp
tp
S D603C..S 15C S eries
S inusoid al Pulse
T = 125°C, V
d v/ dt = 1000V/ µs
J
1E2
S D603C..S 20C S eries
S inusoidal Pulse
T = 125°C, V
dv/ dt = 1000V/ µs
1E2
0.02
J
Pulse Basewidth (µs)
Puls e Basewidth (µs)
0.04
0.1
0.2
RRM
RRM
0.4
= 1760V
= 1760V
1
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
For technical questions, contact: [e-mail]
2
4
0.04
1E3
1E3
0.1
10
0.4
0.2
20 joules per pulse
1
10
2
4
20 joules p er p ulse
(Hockey PUK Version), 600 A
Fast Recovery Diodes
1E 4
1E4
1E 1
1E1
tp
tp
S D603C..S 15C S eries
T rapezoidal Pulse
T = 125°C, V
d v/ dt = 1000V/ µs; di/ dt=50A/ µs
S D603C..S 20C S eries
T rapezoidal Pulse
T = 125°C, V
dv/ dt = 1000V/ µs; di/ d t=50A/ µs
J
J
1E2
1E2
Pulse Basewid th (µs)
Pulse Basewidth (µs)
RRM
RRM
= 1760V
= 1760V
0.4
0.2
0.4
1
1
2
2
4
Document Number: 93178
4
10
10
1E 3
1E3
20 joules per pulse
20 joules per pulse
Revision: 04-Aug-08
1E 4
1E4