MSCD200-12 Microsemi Power Products Group, MSCD200-12 Datasheet

DIODE MOD GPP 1200V 200A SD2

MSCD200-12

Manufacturer Part Number
MSCD200-12
Description
DIODE MOD GPP 1200V 200A SD2
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of MSCD200-12

Voltage - Forward (vf) (max) @ If
1.3V @ 300A
Current - Reverse Leakage @ Vr
9mA @ 1200V
Current - Average Rectified (io) (per Diode)
200A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Chassis Mount
Package / Case
D2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
MSKD200_MSAD200_MSCD200 - Rev 1
Dec, 2009
Module Type
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
MSKD200-08
MSKD200-12
MSKD200-16
MSKD200-18
Symbol
Symbol
Symbol
R
R
Weight
I
V
V
I
T
FSM
th(c-s)
I
th(j-c)
FAV
T
Ms
i
Mt
RD
2
isol
FM
stg
vj
t
MSAD200-08
MSAD200-12
MSAD200-16
MSAD200-18
Circuit
a.c.50Hz;r.m.s.;1min
TYPE
T
T=25℃ I
t=10mS Tvj =45℃
t=10mS Tvj =45℃
To terminals(M6)
vj
To heatsink(M6)
=T
Conditions
Conditions
Conditions
Tc=100℃
Per diode
vjM
Module
Module
V
FM
RD
=300A
=V
RRM
MSCD200-08
MSCD200-12
MSCD200-16
MSCD200-18
MSKD200 ; MSAD200 ; MSCD200
1/3
Glass Passivated Rectifier
Diode Modules
V
I
Applications
Features
FAV
RRM
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Blocking voltage: 800 to 1800V
Heat transfer through aluminum oxide ceramic
isolated metal baseplate
Glass passivated chip
V
1200V
1600V
1800V
800V
-40 to 150
-40 to 125
Values
Values
Values
RRM
231200
5±15%
5±15%
6800
3000
0.21
0.05
200
160
1.3
800 to 1800V
200 Amp
≤9
www.microsemi.com
V
1300V
1700V
1900V
900V
RSM
Units
Units
Units
℃/W
℃/W
A
Nm
Nm
mA
A
A
V
V
g
2
s

Related parts for MSCD200-12

MSCD200-12 Summary of contents

Page 1

... Line rectifiers for transistorized AC motor controllers Field supply for DC motors Features Blocking voltage: 800 to 1800V Heat transfer through aluminum oxide ceramic isolated metal baseplate Glass passivated chip V RRM MSCD200-08 800V MSCD200-12 1200V MSCD200-16 1600V MSCD200-18 1800V Values 231200 -40 to 150 -40 to 125 5±15% 5±15% ...

Page 2

... W 0.15 0 0.001 0.01 0.1 1 Fig3. Transient thermal impedance 250 A Single-Phase Three-Phase 125 100 Fig5.Forward Current Derating Curve MSKD200_MSAD200_MSCD200 - Rev 1 Dec, 2009 MSKD200 ; MSAD200 ; MSCD200 500 W 250 P vtot 0 1.5 2 8000 A Z th( 4000 100 S Fig4. Max Non-Repetitive Forward Surge 150 °C ...

Page 3

... Package Outline Information CASE: D2 Dimensions in mm MSKD200_MSAD200_MSCD200 - Rev 1 Dec, 2009 MSKD200 ; MSAD200 ; MSCD200 3/3 www.microsemi.com ...

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