DSEP2X60-12A IXYS, DSEP2X60-12A Datasheet
DSEP2X60-12A
Manufacturer Part Number
DSEP2X60-12A
Description
DIODE FRED 1200V 60A SOT-227B
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEP2X60-12A.pdf
(2 pages)
Specifications of DSEP2X60-12A
Voltage - Forward (vf) (max) @ If
2.42V @ 60A
Current - Reverse Leakage @ Vr
1mA @ 1200V
Current - Average Rectified (io) (per Diode)
60A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
40ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
120
Ifavm, D = 0.5, Per Diode, (a)
60
@ Tc, (°c)
80
Ifrms, (a)
100
Ifsm, 10 Ms, Tvj=45°c, (a)
800
Vf, Max, Tvj =150°c, (v)
1.52
@ If, (a)
60
Trr, Typ, Tvj =25°c, (ns)
60
Irm , Typ, Tvj =100°c, (a)
60
@ -di/dt, (a/µs)
600
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.60
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSEP2X60-12A
Manufacturer:
NXP
Quantity:
101
Part Number:
DSEP2X60-12A
Quantity:
100
HiPerFRED
with soft recovery
1200
Symbol
I
I
I
E
I
T
T
T
P
V
M
Weight
Symbol
I
V
R
R
t
I
Pulse test:
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
V
FRMS
FAVM
FSM
AR
R
RM
rr
VJ
VJM
stg
tot
ISOL
F
AS
thJC
thCH
RSM
V
d
1200
V
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 s, Duty Cycle < 2.0 %
RRM
V
Conditions
T
T
T
I
V
T
50/60 Hz, RMS
I
mounting torque (M4)
terminal connection torque (M4)
typical
Conditions
T
T
I
I
V
V
T
AS
ISOL
F
F
C
VJ
VJ
C
VJ
VJ
VJ
A
R
R
= 60 A;
= 1 A; -di/dt = 400 A/ s;
= 80°C; rectangular, d = 0.5
= 16 A; L = 180 µH
= 1.25·V
= 25°C
= 30 V; T
= 100 V; I
= 45°C; t
= 25°C; non-repetitive
= 25°C V
= 150°C V
= 100°C
1 mA
Type
DSEP 2x 60-12A
TM
R
p
VJ
typ.; f = 10 kHz; repetitive
T
T
F
= 10 ms (50 Hz), sine
VJ
VJ
R
R
= 25°C
= 200 A; -di
Epitaxial Diode
= V
= V
= 125°C
= 25°C
RRM
RRM
F
/dt = 100 A/ s
1.1-1.5/9-13
1.1-1.5/9-13
typ.
0.1
40
8
Characteristic Values
-40...+150
-40...+150
Maximum Ratings
2500
100
800
150
200
1.6
30
max.
60
28
1.70
2.42
0.6
1
4
Nm/lb.in.
Nm/lb.in.
K/W
K/W
mA
mA
mJ
V~
°C
°C
°C
ns
W
A
A
A
A
V
V
A
g
I
V
t
miniBLOC, SOT-227 B
Features
Applications
Advantages
Dimensions see Outlines.pdf
FAV
rr
International standard package
miniBLOC
Isolation voltage 2500 V~
UL registered E 72873
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
- Power dissipation within the diode
- Turn-on loss in the commutating
RRM
switch
RM
RM
= 2x 60 A
= 1200 V
= 40 ns
-values
reduces:
DSEP 2x 60-12A
1 - 2
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DSEP2X60-12A Summary of contents
Page 1
... Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved Maximum Ratings 100 ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 7 Transient thermal resistance junction to case NOTE: Fig Fig. 6 shows typical values © 2002 IXYS All rights reserved 15 100° 600V 120A 60A 7 30A F 5 ...