MDD250-16N1 IXYS, MDD250-16N1 Datasheet
MDD250-16N1
Manufacturer Part Number
MDD250-16N1
Description
MOD DIODE DUAL 1600V Y2-DCB
Manufacturer
IXYS
Datasheet
1.MDD250-08N1.pdf
(3 pages)
Specifications of MDD250-16N1
Voltage - Forward (vf) (max) @ If
1.3V @ 600A
Current - Reverse Leakage @ Vr
40mA @ 1600V
Current - Average Rectified (io) (per Diode)
290A
Voltage - Dc Reverse (vr) (max)
1600V (1.6kV)
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Chassis Mount
Package / Case
Y2-DCB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MDD250-16N1
Manufacturer:
IXYS
Quantity:
292
Part Number:
MDD250-16N1
Quantity:
60
High Power
Diode Modules
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1300
1500
1700
Symbol
I
I
I
òi
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
Q
I
d
d
a
V
FRMS
FAVM
FSM
RRM
RM
T
900
2
VJ
VJM
stg
ISOL
F
T0
S
A
thJC
thJK
V
S
RSM
d
dt
1200
1400
1600
V
800
RRM
V
Test Conditions
T
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
Test Conditions
T
I
For power-loss calculations only
T
per diode; DC current
per module
per diode; DC current
per module
T
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
ISOL
F
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
= 600 A; T
= 100°C; 180° sine
= 0
= 0
= 0
= 0
= T
= 45°C;
= T
= 45°C
= T
= T
= 125°C, I
= T
£ 1 mA
VJM
VJM
VJM
VJM
VJM
Type
MDD 250-08N1
MDD 250-12N1
MDD 250-14N1
MDD 250-16N1
; V
VJ
R
F
= V
= 25°C
= 400 A; -di/dt = 50 A/ms
RRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
other values
see Fig. 6/7
12-15/106-132 Nm/lb.in.
Characteristic Values
2.5-5/22-44 Nm/lb.in.
-40...+150
-40...+125
Maximum Ratings
3
605 000
560 000
405 000
380 000
11 000
11 700
9000
9600
3000
3600
0.0845
450
290
150
320
0.129
0.065
0.169
0.75
0.75
12.7
760
275
1
1.3
9.6
40
50
K/W
K/W
K/W
K/W
m/s
mW
mm
mm
mA
A
A
A
A
mC
V~
V~
°C
°C
°C
V
V
A
A
A
A
A
A
A
g
2
2
2
2
2
s
s
s
s
2
I
I
V
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250, material brass
FRMS
FAVM
Direct copper bonded Al
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
RRM
1
= 2x 450 A
= 2x 290 A
= 800-1600 V
2
3
MDD 250
14
20
2
O
3
-ceramic
12
1 - 3
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MDD250-16N1 Summary of contents
Page 1
... Strike distance through air A a Maximum allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 3 1 Maximum Ratings 450 290 ...
Page 2
... Fig. 1 Surge overload current I : Crest value, t: duration FSM © 2000 IXYS All rights reserved Fig. 2 ò versus time (1-10 ms) MDD 250 Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: ...
Page 3
... K/W Z thJK 0.15 0.10 0. © 2000 IXYS All rights reserved MDD 250 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) 30° ...