IXGM40N60A IXYS, IXGM40N60A Datasheet

IGBT LO VOLT 600V 75AMP TO-204AE

IXGM40N60A

Manufacturer Part Number
IXGM40N60A
Description
IGBT LO VOLT 600V 75AMP TO-204AE
Manufacturer
IXYS
Datasheet

Specifications of IXGM40N60A

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 40A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
4.5nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
TO-204AA, TO-3 (2 Leads + case)
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-204 AE
Pin Count
2 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
Q1516356
Q5828005
Low V
High speed IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
© 1996 IXYS All rights reserved
CES
C25
C90
CM
GES
CES
CGR
GES
GEM
C
J
JM
stg
GE(th)
CE(sat)
d
CES
CE(sat)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 H
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, limited by leads
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
IGBT
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
VJ
GE
CES
= 15 V
= 125 C, R
= 20 V
GE
CE
= 0 V
= V
GE
GE
= 1 M
G
= 22
T
T
40N60
40N60A
(T
J
J
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
IXGH/IXGM 40 N60
IXGH/IXGM 40 N60A
TO-204 = 18 g, TO-247 = 6 g
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
= 80
600
600
150
250
150
300
CES
20
30
75
40
max.
200
100
2.5
3.0
5
1
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
V
C
C
C
C
A
TO-247 AD (IXGH)
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
Features
Applications
Advantages
International standard packages
2nd generation HDMOS
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125 C)
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
600 V
600 V
V
G
CES
C
CE(sat)
E
C
C = Collector,
TAB = Collector
75 A
75 A
I
C25
TM
91513E (3/96)
process
V
2.5 V
3.0 V
CE(sat)

Related parts for IXGM40N60A

IXGM40N60A Summary of contents

Page 1

... V GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Maximum Ratings 600 = 1 M 600 150 = 0.8 V CES 250 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 Characteristic Values ( unless otherwise specified) J min ...

Page 2

... V (Clamp) > 0.8 • off T or increased thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 4500 ...

Page 3

... V - Volts GE Fig. 5 Input Admittance 100V 25° 125° Volts GE © 1996 IXYS All rights reserved 13V 11V 40A 20A IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Fig. 2 Output Characterstics 350 13V V = 15V GE 11V 300 9V 250 200 150 100 Volts CE Fig. 4 Temperature Dependence of Output Saturation Voltage 1 ...

Page 4

... D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 150 200 250 Duty Cycle 0.001 0.01 Pulse Width - seconds ...

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