IGBT LO VOLT 600V 75AMP TO-204AE

 

IXGM40N60A

Manufacturer Part NumberIXGM40N60A
DescriptionIGBT LO VOLT 600V 75AMP TO-204AE
ManufacturerIXYS
IXGM40N60A datasheets

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Specifications of IXGM40N60A

ConfigurationSingleVoltage - Collector Emitter Breakdown (max)600V
Vce(on) (max) @ Vge, Ic3V @ 15V, 40ACurrent - Collector (ic) (max)75A
Current - Collector Cutoff (max)200µAInput Capacitance (cies) @ Vce4.5nF @ 25V
Power - Max250WInputStandard
Ntc ThermistorNoMounting TypeChassis Mount
Package / CaseTO-204AA, TO-3 (2 Leads + case)Channel TypeN
Collector-emitter Voltage600VCollector Current (dc) (max)75A
Gate To Emitter Voltage (max)±20VPackage TypeTO-204 AE
Pin Count2 +TabMountingThrough Hole
Operating Temperature (min)-55Operating Temperature (max)150C
Operating Temperature ClassificationMilitaryLead Free Status / RoHS StatusLead free / RoHS Compliant
Igbt Type-Other namesQ1516356
Q5828005
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Low V
IGBT
CE(sat)
High speed IGBT
Symbol
Test Conditions
V
T
= 25 C to 150 C
CES
J
V
T
= 25 C to 150 C; R
CGR
J
V
Continuous
GES
V
Transient
GEM
I
T
= 25 C, limited by leads
C25
C
I
T
= 90 C
C90
C
I
T
= 25 C, 1 ms
CM
C
SSOA
V
= 15 V, T
= 125 C, R
GE
VJ
(RBSOA)
Clamped inductive load, L = 30 H
P
T
= 25 C
C
C
T
J
T
JM
T
stg
M
Mounting torque (M3)
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
BV
I
= 250 A, V
= 0 V
CES
C
GE
V
I
= 250 A, V
= V
GE(th)
C
CE
I
V
= 0.8 • V
CES
CE
CES
V
= 0 V
GE
I
V
= 0 V, V
= 20 V
GES
CE
GE
V
I
= I
, V
= 15 V
CE(sat)
C
C90
GE
© 1996 IXYS All rights reserved
IXGH/IXGM 40 N60
IXGH/IXGM 40 N60A
Maximum Ratings
600
= 1 M
600
GE
20
30
75
40
150
= 22
I
= 80
G
CM
@ 0.8 V
CES
250
-55 ... +150
150
-55 ... +150
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
Characteristic Values
(T
= 25 C, unless otherwise specified)
J
min.
typ.
max.
600
2.5
GE
T
= 25 C
J
T
= 125 C
J
40N60
40N60A
V
I
CES
C25
600 V
75 A
600 V
75 A
TO-247 AD (IXGH)
V
V
V
G
C
V
E
A
TO-204 AE (IXGM)
A
A
A
W
C
C
G = Gate,
C = Collector,
C
E = Emitter,
TAB = Collector
C
Features
International standard packages
2nd generation HDMOS
Low V
C
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125 C)
Applications
AC motor speed control
V
DC servo and robot drives
DC choppers
5
V
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
200
A
1
mA
power supplies
100
nA
Advantages
Easy to mount with 1 screw (TO-247)
2.5
V
(isolated mounting screw hole)
3.0
V
High power density
V
CE(sat)
2.5 V
3.0 V
TM
process
91513E (3/96)

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IXGM40N60A Summary of contents

  • Page 1

    ... V GE(th 0.8 • V CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Maximum Ratings 600 = 1 M 600 150 = 0.8 V CES 250 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 Characteristic Values ( unless otherwise specified) J min ...

  • Page 2

    ... V (Clamp) > 0.8 • off T or increased thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 4500 ...

  • Page 3

    ... V - Volts GE Fig. 5 Input Admittance 100V 25° 125° Volts GE © 1996 IXYS All rights reserved 13V 11V 40A 20A IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Fig. 2 Output Characterstics 350 13V V = 15V GE 11V 300 9V 250 200 150 100 Volts CE Fig. 4 Temperature Dependence of Output Saturation Voltage 1 ...

  • Page 4

    ... D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 150 200 250 Duty Cycle 0.001 0.01 Pulse Width - seconds ...

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