CPV362M4K Vishay, CPV362M4K Datasheet - Page 2

• Manufacturer Part Number: CPV362M4K
• Description: IGBT SIP MODULE 600V 31 IMS-2
• Manufacturer: Vishay

Specifications of CPV362M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.93V @ 15V, 3A
• Current - Collector (ic) (max): 5.7A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.45nF @ 30V
• Power - Max: 23W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Transistor Polarity: N Channel
• Dc Collector Current: 5.7A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 23W
• Collector Emitter Voltage V(br)ceo: 600V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *CPV362M4K

CPV362M4K
Electrical Characteristics @ T
Switching Characteristics @ T
di
E
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
t
t
t
t
t
E
C
C
C
t
I
Q
CES
GES
d(on)
d(off)
f
sc
d(on)
d(off)
f
rr
r
r
rr
V
ts
(rec)M
fe
on
off
ts
(BR)CES
CE(on)
GE(th)
V
ies
oes
res
FM
g
ge
gc
rr
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
––– 0.49 –––
––– 1.98 –––
––– 1.65 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.07 –––
––– 0.21 0.26
–––
–––
–––
–––
––– 0.33 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1.70 1.93
––– 0.14 –––
3.0
2.0
–––
10
–––
––– ±100
–––
–––
––– 1700
125
120
–––
308
166
450
124
240
210
-13
3.0
1.4
1.3
5.2
3.5
4.5
14
38
18
23
54
25
51
61
37
55
65
–––
–––
188
180
–––
–––
–––
–––
–––
–––
––– mV/°C V
250
–––
–––
–––
–––
138
360
–––
–––
6.0
1.7
1.6
5.0
8.0
57
27
55
90
8
A/µs T
V/°C
nA
mJ
µA
nC
mJ
nC
ns
µs
ns
pF
ns
V
V
S
V
A
See Fig. 9, 10, 18
ƒ = 1.0MHz
T
V
V
I
I
I
V
V
V
V
I
I
V
I
V
See Fig. 8
T
I
V
Energy losses include "tail" and
diode reverse recovery.
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
V
V
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
J
GE
CC
GE
J
GE
GE
CC
J
J
J
J
J
J
J
= 3.0A, T
= 8A, T
= 3.0A
= 5.7A
= 8A
= 3.0A
= 3.0A, V
= 25°C
=3.0A, V
= 150°C,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= V
= V
= 0V, I
= 0V, I
= 100V, I
= 0V, V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V, V
= ±20V
= 400V
= 0V
= 30V
GE
GE
J
, I
, I
= 150°C
C
C
J
CC
CE
CC
C
C
CE
See Fig.
See Fig.
See Fig.
See Fig.
= 1.0mA
= 150°C
= 250µA
G
G
G
Conditions
Conditions
C
= 250µA
= 250µA
See Fig. 13
J
= 480V
= 600V, T
= 480V
= 600V
= 51
= 51 , V
= 51
= 12A
See Fig. 10, 11, 18
= 125°C
14
15
16
17
See Fig. 7
di/dt=200A/µs
See Fig. 2, 5
V
CPK
J
GE
= 150°C
I
V
F
R
< 500V
= 15V
= 8A
= 200V