IXEN60N120D1 IXYS, IXEN60N120D1 Datasheet - Page 3

• Manufacturer Part Number: IXEN60N120D1
• Description: IGBT NPT3 1200V 100A SOT-227B
• Manufacturer: IXYS

Specifications of IXEN60N120D1

• Configuration: Single
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 60A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 3.8nF @ 25V
• Power - Max: 445W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 100
• Ic90, Tc=90°c, Igbt, (a): 65
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): 30
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.8
• Rthjc, Max, Igbt, (°c/w): 0.28
• If, Tc=90°c, Diode, (a): 60
• Rthjc, Max, Diode, (k/w): 0.6
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2003 IXYS All rights reserved
I
V
I
C
C
GE
120
100
160
120
A
80
60
40
20
20
15
10
A
80
40
V
0
5
0
0
0
0
4
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
T
VJ
V
CE
= 125°C
100
= 20 V
6
1
V GE = 17 V
200
8
2
T
VJ
= 25°C
300
10
15 V
V
V
CE
GE
V
I
C
Q
3
CE
13 V
G
400
T
= 600 V
12
= 50 A
VJ
= 25°C
V
nC
V
11 V
9 V
500
4
14
I
C
I
RM
I
F
120
100
160
120
100
A
80
60
40
20
80
40
A
80
60
40
20
0
A
0
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
0
t rr
I RM
200
free wheeling diode
free wheeling diode
1
1
400
T
VJ
= 125°C
2
V GE = 17 V
IXEN 60N120
IXEN 60N120D1
600
V
T
VJ
V
F
-di/dt
2
CE
T
= 125°C
T
V
I
VJ
F
VJ
3
R
= 25°C
= 60 A
= 125°C
= 600 V
800
15 V 13 V
A/µs
V
IXEN60N120
11 V
V
9 V
1000
4
3
300
240
180
120
60
0
ns
3 - 4
t
rr