IXGN72N60C3H1 IXYS, IXGN72N60C3H1 Datasheet

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IXGN72N60C3H1

Manufacturer Part Number
IXGN72N60C3H1
Description
IGBT 78A 600V SOT-227B
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGN72N60C3H1

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 50A
Current - Collector (ic) (max)
78A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.78nF @ 25V
Power - Max
360W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
78
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
52
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
55
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.93
Rthjc, Max, Igbt, (°c/w)
0.35
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
0.42
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGN72N60C3H1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
GenX3
with Diode
High-Speed Low-Vsat PT
IGBTs 40-100 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
TM
Terminal Connection Torque
Test Conditions
Continuous
Transient
T
T
T
T
T
V
Clamped Inductive Load
T
50/60Hz
I
Mounting Torque
Test Conditions
T
T
I
V
V
I
ISOL
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
600V IGBT
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 250μA, V
= 50A, V
= 25°C
= 25°C
≤ 1mA
= V
= 0V, V
CES
, V
GE
VJ
GE
GE
= 125°C, R
= ±20V
CE
= 15V, Note 1
= 0V
= V
GE
t = 1min
t = 1s
GE
= 1MΩ
G
= 2Ω
T
T
J
J
= 125°C
= 125°C
IXGN72N60C3H1
Min.
Characteristic Values
3.0
@ V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
CE
1.3/11.5
1.5/13
≤ V
= 150
2.10
1.65
2500
3000
Typ.
600
600
±20
±30
500
360
150
360
78
52
50
CES
30
±100
2.50
Max.
250
5.5
Nm/lb.in.
Nm/lb.in.
3
mA
mJ
V~
μA
V~
nA
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
A
g
V
I
V
t
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Aluminium Nitride Isolation
- High Power Dissipation
Isolation Voltage 3000V~
Avalanche Rated
Anti-Parallel Ultra Fast Diode
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
G
≤ ≤ ≤ ≤ ≤
= 600V
= 52A
= 55ns
E
£
DS100053A(11/09)
2.50V
C
E

Related parts for IXGN72N60C3H1

IXGN72N60C3H1 Summary of contents

Page 1

... V GE(th CES CE CES GE = ±20V 0V, V GES 50A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGN72N60C3H1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 360 50 500 = 2Ω 150 G CM ≤ CES 360 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 ...

Page 2

... Characteristic Values Min. Typ. 1 150°C 1 100°C J 140 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN72N60C3H1 SOT-227B miniBLOC Max screws (4x) supplied mJ 130 ns 110 ns 0. 0.35 °C/W °C/W Max. 2 ...

Page 3

... J 1 15V GE 13V 1.2 11V 1.1 9V 1.0 0.9 7V 0.8 0.7 0.6 5V 0.5 1.6 2.0 2.4 100 T = 25º IXGN72N60C3H1 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V JunctionTemperature V = 15V 50A 25A Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25º ...

Page 4

... C ies 120 100 C oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGN72N60C3H1 Fig. 8. Gate Charge V = 300V 50A 10mA 100 120 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 2Ω < 10V / ns 200 300 400 V - Volts CE 0 ...

Page 5

... C 100 0 105 115 125 160 150 140 140 130 120 T = 125ºC 120 J 100 110 100 90 = 25º 100 IXGN72N60C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125ºC, 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ...

Page 6

... 480V 100A 50A Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 60 110 100 105 115 125 IXGN72N60C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 480V 25ºC, 125º Amperes 100 IXYS REF: G_72N60C3(8D)11-25-09-C ...

Page 7

... Fig. 26. Maximum Transient Thermal Impedance Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2009 IXYS CORPORATION, All Rights Reserved Fig. 22 Fig. 25 0.01 0.1 0.01 0 Pulse Width [ms] Pulse Width Seconds IXGN72N60C3H1 Fig IXYS REF: G_72N60C3(8D)11-25-09-C ...

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