IXSN35N100U1 IXYS, IXSN35N100U1 Datasheet

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IXSN35N100U1

Manufacturer Part Number
IXSN35N100U1
Description
IGBT 64A 1000V SOT-227B
Manufacturer
IXYS
Datasheet

Specifications of IXSN35N100U1

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1000V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 25A
Current - Collector (ic) (max)
38A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
4.5nF @ 25V
Power - Max
205W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
34
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Igbt, (ns)
1000
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.8
Rthjc, Max, Igbt, (k/w)
0.61
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXSN35N100U1
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXSN35N100U1
Manufacturer:
NIEC
Quantity:
228
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IGBT with Diode
High Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
V
T
T
T
M
Weight
Symbol
BV
V
I
I
V
C25
C90
CM
SC
CES
GES
J
JM
stg
ISOL
GE(th)
CE(sat)
CES
CGR
GES
GEM
C
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 H
V
R
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
I
V
V
V
I
ISOL
C
C
C
J
J
C
C
C
C
GE
GE
G
CE
GE
CE
= 22
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 15 V, V
= 25 C
= 6 mA, V
= 10 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
1 mA
C90
, V
, non repetitive
GE
GE
VJ
CE
CES
GE
= 15 V
= 125 C, R
= 20 V
= 0.6 • V
CE
= 0 V
= V
t = 1 min
t = 1 s
GE
GE
CES
= 1 M
G
, T
= 22
T
T
(T
J
J
J
= 125 C
= 25 C
= 125 C
J
IXSN 35N100U1
= 25 C, unless otherwise specified)
1000
min.
Characteristic Values
-40 ... +150
-40 ... +150
5
@ 0.8 V
Maximum Ratings
I
typ.
CM
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1000
1000
2500
3000
= 50
205
150
CES
20
30
38
25
50
10
30
2
4
max.
750
500
3.5
15
8
mA
V~
V~
nA
3
1
W
V
A
V
V
A
A
A
A
V
V
V
g
C
C
C
A
s
Phone: +49-6206-503-0, Fax: +49-6206-503627
miniBLOC, SOT-227 B
1 = Emitter,
2 = Gate,
Features
(FRED)
Applications
Advantages
V
I
V
C25
International standard package
miniBLOC (ISOTOP) compatible
Isolation voltage 3000 V~
2nd generation HDMOS
- for high short circuit SOA
Low V
- for minimum on-state conduction
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode
- short t
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Space savings
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 2 screws
High power density
CES
CE(sat)
losses
Edisonstr. 15, D-68623 Lampertheim
CE(sat)
rr
2
and I
IXYS Semiconductor GmbH
= 1000 V
= 38 A
= 3.5 V
4 = Kelvin Emitter
3 = Collector
1
RM
3
TM
4
93005C (7/94)
process

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IXSN35N100U1 Summary of contents

Page 1

... V GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions and dimensions. © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXSN 35N100U1 2 4 Maximum Ratings 1000 = 1 M 1000 GE 20 ...

Page 2

... thJC IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 Characteristic Values ...

Page 3

... Typ. temp. dependence of V Fig. 4 CE(sat 100 150 nC 200 Q G Typ. turn-on gate charge Fig. 7 characteristics f © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 150 25° 120 Typ. output characteristics Fig. 2 350 25°C J 300 ...

Page 4

... Typ. turn-on energy per pulse Fig 12 Typ. turn-on energy per pulse Fig. 12 Forward characteristic of Fig. 14 reverse diode IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 off 12.5 A ...

Page 5

... IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 ...

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