IXGN200N60A2 IXYS, IXGN200N60A2 Datasheet

IGBT 600V 200A SOT-227B

IXGN200N60A2

Manufacturer Part Number
IXGN200N60A2
Description
IGBT 600V 200A SOT-227B
Manufacturer
IXYS
Datasheet

Specifications of IXGN200N60A2

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.35V @ 15V, 100A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
50µA
Input Capacitance (cies) @ Vce
9.9nF @ 25V
Power - Max
700W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
200A
Gate To Emitter Voltage (max)
±20V
Package Type
SOT-227B
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
200
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
100
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
12
Rthjc, Max, Igbt, (°c/w)
0.17
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT
Optimized for Switching
up to 5 kHz
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
© 2003 IXYS All rights reserved
Symbol
V
I
I
V
CM
C25
C110
CES
GES
J
JM
stg
CGR
GEM
C
ISOL
CES
GES
GE(th)
CE(sat)
d
T
T
J
J
Test Conditions
= 25°C to 150°C
= 25°C to 150°C; R
Continuous
Transient
T
T
T
V
Clamped inductive load
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
V
V
V
I
ISOL
C
C
C
C
C
C
GE
CE
GE
CE
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
≤ 1 mA
= 1 mA, V
= V
= 0 V
= 0 V, V
= I
C110
CES
, V
GE
VJ
GE
CE
= 125°C, R
= ±20 V
= 15 V
= V
GE
GE
t = 1 min
t = 1 s
= 1 MΩ
G
= 2.0 Ω
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
IXGN 200N60A2
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
CM
typ.
1.2
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
= 200
2500
3000
600
600
±20
±30
200
100
400
700
150
CES
30
E
max.
±400
1.35
5.5
50
2
°C
°C
°C
V~
V~
mA
W
µA
nA
V
V
V
V
A
A
A
A
g
V
V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Applications
Advantages
International standard package
miniBLOC
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current IGBT
Low V
conduction losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 2 screws
Space savings
High power density
Main or Kelvin Emitter
either emitter terminal can be used as
V
I
V
C25
CES
CE(sat)
CE(sat)
G
for minimum on-state
E
= 600 V
= 200 A
= 1.35 V
C
DS99087A(11/03)
E

Related parts for IXGN200N60A2

IXGN200N60A2 Summary of contents

Page 1

... CES CE CES ± GES CE(sat) C C110 GE © 2003 IXYS All rights reserved IXGN 200N60A2 E Maximum Ratings 600 = 1 MΩ 600 ±20 ±30 200 100 400 = 2.0 Ω 200 0.8 V CES 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25° ...

Page 2

... R CE CES G off off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 70 106 9900 740 190 480 = 0 ...

Page 3

... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em iiter Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1 Volts G E © 2003 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 350 9V 300 250 7V 200 150 100 1.5 1.75 2 2.25 0 1.4 1.3 7V 1.2 1 ...

Page 4

... 10mA 100 150 200 250 300 350 400 450 500 Q - nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 200 250 300 350 on I off c 30 ...

Page 5

... IXYS All rights reserved Fig Tra The Puls e W idth - millis ec onds IXGN 200N60A2 ...

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