IXGN200N60A2 IXYS, IXGN200N60A2 Datasheet
IXGN200N60A2
Specifications of IXGN200N60A2
Related parts for IXGN200N60A2
IXGN200N60A2 Summary of contents
Page 1
... CES CE CES ± GES CE(sat) C C110 GE © 2003 IXYS All rights reserved IXGN 200N60A2 E Maximum Ratings 600 = 1 MΩ 600 ±20 ±30 200 100 400 = 2.0 Ω 200 0.8 V CES 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25° ...
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... R CE CES G off off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 70 106 9900 740 190 480 = 0 ...
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... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em iiter Voltage 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1 Volts G E © 2003 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 350 9V 300 250 7V 200 150 100 1.5 1.75 2 2.25 0 1.4 1.3 7V 1.2 1 ...
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... 10mA 100 150 200 250 300 350 400 450 500 Q - nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 200 250 300 350 on I off c 30 ...
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... IXYS All rights reserved Fig Tra The Puls e W idth - millis ec onds IXGN 200N60A2 ...