IXSN35N120AU1 IXYS, IXSN35N120AU1 Datasheet
IXSN35N120AU1
Specifications of IXSN35N120AU1
Related parts for IXSN35N120AU1
IXSN35N120AU1 Summary of contents
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... CE(sat) C C90 GE ‚ Device must be heat sunk during high temperature leackage test to avoid thermal runaway. IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSN 35N120AU1 2 4 Maximum Ratings 1200 = 1 MW 1200 GE ±20 ±30 ...
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... J min. typ. /dt = 480 A/ 100°C 225 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSN35N120AU1 miniBLOC, SOT-227 B max screws (4x) supplied 190 nC Dim. Millimeter Min. Max 31.50 31.88 B 7.80 8 ...
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... V = 10V 125° 25° 40C Volts GE © 2000 IXYS All rights reserved 13V =15V 11V IXSN35N120AU1 Fig. 2 Output Characterstics 250 V = 15V T = 25° 200 150 100 Volts CE Fig. 4 Temperature Dependence of Output Saturation Voltage 1.4 V =15V GE 1 70A C 1.2 1 35A C 1.0 0 ...
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... IXYS All rights reserved 25 1250 20 1000 15 750 10 500 5 250 100 10 1 0.1 0.01 150 200 0.001 0.01 Pulse Width - Seconds IXSN35N120AU1 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time 125° 35A off Ohms G Fig.10 Turn-Off Safe Operating Area T = 125°C ...