CP15TD1-24A Powerex Inc, CP15TD1-24A Datasheet - Page 3

• Manufacturer Part Number: CP15TD1-24A
• Description: DIP-CIB MOD 1200V 15A
• Manufacturer: Powerex Inc
• Type: CIB Moduler

Specifications of CP15TD1-24A

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 3.24nF @ 10V
• Power - Max: 113W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Through Hole
• Package / Case: DIP
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 15A
• Circuit Configuration: CIB Module
• Rohs Compliant: Yes
• Interface Circuit Ref Design: EVBCPXXTD1-24
• Recommended Hvic: M81706AFP x3; M81716FP x1
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

CP15TD1-24A
DIP-CIB
3Ø Converter + 3Ø Inverter + Brake
15 Amperes/1200 Volts
Electrical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Inverter Part
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate-Emitter Cutoff Current
Collector-Emitter
Saturation Voltage*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time**
Reverse Recovery Charge**
Emitter-Collector Voltage**
External Gate Resistance
Brake Part
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate-Emitter Cutoff Current
Collector-Emitter
Saturation Voltage*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Forward Voltage Drop
External Gate Resistance
*Pulse width and repetition rate should be such as to cause negligible temperature rise.
**T C is measured just underneath the power chip.
Rev. 04/06
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
V CE(sat)
V CE(sat)
V GE(th)
V GE(th)
Symbol
t d(on )
t d(off)
t d(on )
t d(off)
I CES
I GES
C oes
I CES
I GES
C oes
C ies
C res
V EC
C ies
C res
V FM
Q G
Q G
Q rr
Q rr
R g
R g
t rr
t rr
t r
t f
t r
t f
V CC = 600V, I C = 15A, V GE = 15V
V CC = 600V, I C = 10A, V GE = 15V
I C = 15A, V GE = 15V, T j = 125°C
I C = 10A, V GE = 15V, T j = 125°C
V CE = 10V, V GE = 0V, f = 1MHz
V CE = 10V, V GE = 0V, f = 1MHz
I C = 15A, V GE = 15V, T j = 25°C
I C = 10A, V GE = 15V, T j = 25°C
I F = 10A, Clamp Diode Part
V CE = V CES , V GE = 0V
V GE = ±15V, R G = 22Ω,
V CE = V CES , V GE = 0V
V GE = ±15V, R G = 33Ω,
I C = 1.5mA, V CE = 10V
I C = 1.0mA, V CE = 10V
V CC = 600V, I C = 15A,
V CC = 600V, I C = 10A,
V GE = 20V, V CE = 0V
V GE = 20V, V CE = 0V
I E = 15A, V GE = 0V
Inductive Load
Inductive Load
Test Conditions
T j = 25°C,
T j = 25°C,
—
—
Min.
6.5
6.5
22
33
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.35
Typ.
200
200
7.5
1.8
2.0
2.8
7.5
1.8
2.0
0.3
2.8
86
57
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
3.24
0.06
2.04
0.16
0.04
100
300
400
100
300
400
0.3
3.5
220
3.5
330
1.0
8.5
1.0
2.5
75
1.0
8.5
1.0
2.5
75
—
—
—
—
—
—
—
—
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mA
mA
µA
nF
nF
nF
nC
µC
µA
nF
nF
nF
nC
µC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Ω
Ω
3