VKI50-06P1 IXYS, VKI50-06P1 Datasheet
VKI50-06P1
Specifications of VKI50-06P1
Related parts for VKI50-06P1
VKI50-06P1 Summary of contents
Page 1
... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved F10 A 1 P18 A 4 NTC S18 Maximum Ratings 600 ± 20 42.5 29 ...
Page 2
... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved Maximum Ratings 30 19 Characteristic Values min. ...
Page 3
... 125° 25° Fig. 3 Typ. transfer characteristics 300 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved I C 11V 9V 25T60 25T60 25T60 120 nC 160 Q G VKI 50-06P1 125°C ...
Page 4
... R Fig. 9 Typ. turn on energy and switching 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved off d(on 1,0 40 0,5 20 25T60 0 ...