MDI100-12A3 IXYS, MDI100-12A3 Datasheet
MDI100-12A3
Manufacturer Part Number
MDI100-12A3
Description
IGBT NPT BUCK 1200V 135A Y4-M5
Manufacturer
IXYS
Datasheet
1.MDI100-12A3.pdf
(4 pages)
Specifications of MDI100-12A3
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 75A
Current - Collector (ic) (max)
135A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
5.5nF @ 25V
Power - Max
560W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Y4-M5
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
135
Ic80, Tc = 80°c, Igbt, (a)
90
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
10.5
Rthjc, Max, Igbt, (k/w)
0.22
If25, Tc = 25°c, Diode, (a)
150
If80, Tc = 80°c, Diode, (a)
95
Rthjc, Max, Diode, (k/w)
0.45
Package Style
Y4-M5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
V
V
I
I
I
t
(SCSOA)
RBSOA
P
T
T
V
M
d
d
a
Weight
Data according to a single IGBT/FRED unless otherwise stated.
© 2000 IXYS All rights reserved
C25
C80
CM
SC
stg
A
CES
CGR
GES
GEM
tot
J
ISOL
S
d
Conditions
T
T
Continuous
Transient
T
T
T
V
R
V
Clamped inductive load, L = 100 mH
T
50/60 Hz, RMS
I
Insulating material: Al
Mounting torque (module)
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
ISOL
J
J
C
C
C
C
GE
GE
G
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 80°C
= 80°C, t
= 15 W, non repetitive
= ±15 V, T
= 25°C
= ±15 V, V
£ 1 mA
p
6
4
5
7
= 1 ms
J
CE
= 125°C, R
= V
(teminals)
t = 1 min
t = 1 s
CES
MII
2
O
GE
, T
3
= 20 kW
J
G
= 125°C
= 15 W
1
3
2
4
5
MID
-40 ... +150
V
I
1
3
2
CM
Maximum Ratings
CEK
2.25-2.75
2.5-3.7
= 150
< V
20-25
22-33
7
6
1200
1200
4000
4800
12.7
135
180
560
150
130
±20
±30
9.6
4.6
CES
90
10
50
MDI
lb.in.
lb.in.
MII 100-12 A3
m/s
mm
mm
Nm
Nm
V
V
V
V
A
A
A
ms
A
W
°C
°C
V~
V~
g
oz.
2
1
3
2
I
V
V
Features
Advantages
Typical Applications
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
package with DCB ceramic base plate
isolation voltage 4800 V
UL registered E72873
space and weight savings
reduced protection circuits
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
CES
CE(sat) typ.
3
MID 100-12 A3
MDI 100-12 A3
= 135 A
= 1200 V
= 2.2 V
2
1
4
5
E 72873
1 - 4
6
7
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MDI100-12A3 Summary of contents
Page 1
... Insulating material Mounting torque (module) d (teminals) d Creepage distance on surface S d Strike distance through air A a Max. allowable acceleration Weight Typical Data according to a single IGBT/FRED unless otherwise stated. © 2000 IXYS All rights reserved MID Maximum Ratings 1200 = 20 kW 1200 GE ±20 ± ...
Page 2
... T = 25° 80° - 125° 600 thJC R with heatsink compound thJS © 2000 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 1200 4 25° 125°C 7.5 J 2.2 5.5 0.75 0.33 100 50 = 125°C J 650 50 12.1 10 ...
Page 3
... 100 Fig. 3 Typ. transfer characteristics 600V 75A 100 200 300 Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved V =17V GE 15V 13V I C 11V 9V 2.5 3 400 MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 175 T = 125° 150 ...
Page 4
... A 160 I CM 120 125° < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 160 120 E t off t d(on 600V ±15V 125°C J ...