IGBT 1200V 135A SOA/RBSOA

 

MII100-12A3

Manufacturer Part NumberMII100-12A3
DescriptionIGBT 1200V 135A SOA/RBSOA
ManufacturerIXYS
MII100-12A3 datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

Specifications of MII100-12A3

Igbt TypeNPTConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.7V @ 15V, 75A
Current - Collector (ic) (max)135ACurrent - Collector Cutoff (max)5mA
Input Capacitance (cies) @ Vce5.5nF @ 25VPower - Max560W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseY4-M5
Channel TypeNCollector-emitter Voltage1.2kV
Gate To Emitter Voltage (max)±20VMountingScrew
Operating Temperature (min)-40COperating Temperature (max)150C
Operating Temperature ClassificationAutomotiveVces, (v)1200
Ic25, Tc = 25°c, Igbt, (a)135Ic80, Tc = 80°c, Igbt, (a)90
Vce(sat), Typ, Tj = 25°c, Igbt, (v)2.2Eoff, Typ, Tj = 125°c, Igbt, (mj)10.5
Rthjc, Max, Igbt, (k/w)0.22If25, Tc = 25°c, Diode, (a)150
If80, Tc = 80°c, Diode, (a)95Rthjc, Max, Diode, (k/w)0.45
Package StyleY4-M5Lead Free Status / RoHS StatusLead free / RoHS Compliant
show all specifications
1
Page 1
2
Page 2
3
Page 3
4
Page 4
Page 1/4

Download datasheet (119Kb)Embed
Next
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII
7
6
4
5
Symbol
Conditions
V
T
= 25°C to 150°C
CES
J
V
T
= 25°C to 150°C; R
CGR
J
V
Continuous
GES
V
Transient
GEM
I
T
= 25°C
C25
C
I
T
= 80°C
C80
C
I
T
= 80°C, t
= 1 ms
CM
C
p
t
V
= ±15 V, V
= V
SC
GE
CE
CES
= 15 W, non repetitive
(SCSOA)
R
G
RBSOA
V
= ±15 V, T
= 125°C, R
GE
J
Clamped inductive load, L = 100 mH
P
T
= 25°C
tot
C
T
J
T
stg
V
50/60 Hz, RMS
t = 1 min
ISOL
£ 1 mA
I
t = 1 s
ISOL
Insulating material: Al
2
M
Mounting torque (module)
d
(teminals)
d
Creepage distance on surface
S
d
Strike distance through air
A
a
Max. allowable acceleration
Weight
Typical
Data according to a single IGBT/FRED unless otherwise stated.
© 2000 IXYS All rights reserved
MID
1
1
7
3
3
6
4
2
2
5
Maximum Ratings
1200
= 20 kW
1200
GE
±20
±30
135
90
180
, T
= 125°C
10
J
= 15 W
I
= 150
G
CM
V
< V
CEK
CES
560
150
-40 ... +150
4000
4800
O
3
2.25-2.75
20-25
2.5-3.7
22-33
12.7
9.6
50
130
4.6
MII 100-12 A3
MID 100-12 A3
MDI 100-12 A3
I
= 135 A
C25
V
= 1200 V
CES
V
= 2.2 V
CE(sat) typ.
MDI
2
1
3
3
2
Features
NPT IGBT technology
low saturation voltage
V
low switching losses
V
switching frequency up to 30 kHz
V
square RBSOA, no latch up
high short circuit capability
V
positive temperature coefficient for
A
easy parallelling
A
MOS input, voltage controlled
A
ultra fast free wheeling diodes
package with DCB ceramic base plate
ms
isolation voltage 4800 V
UL registered E72873
A
Advantages
W
space and weight savings
°C
reduced protection circuits
°C
V~
Typical Applications
V~
AC and DC motor control
AC servo and robot drives
Nm
power supplies
lb.in.
welding inverters
Nm
lb.in.
mm
mm
2
m/s
g
oz.
4
1
5
6
7
E 72873
1 - 4

Related parts for MII100-12A3

Part Number DescriptionManufacturer Datasheet
  MII10012A3 IXYS SEMICOND
MII145-12A3  MII145-12A3 MOD IGBT RBSOA 1200V 160A Y4-M5 IXYS
  MII150-12A4 MOD IGBT RBSOA 1200V 180A Y3-DCB IXYS
  MII14512A3 IXYS SEMICOND
  IXFN61N50 IXYS
  MDD44-12N1 IXYS
  MDD44-12 IXYS
  MCC60-16io1B IXYS
  IXFN200N06 HiPerFET Power MOSFETs IXYS Corporation
  74F112DC J-K-Type Flip-Flop IXYS Corporation
  IXFN24N100 HiPerRF Power MOSFETs IXYS Corporation
  VUM85-05A Rectifier Module for Three Phase Power Factor Correction IXYS Corporation
  MCD26-16IO1B Thyristor Modules Thyristor/Diode Modules IXYS Corporation
  MCD26-16IO8B Thyristor Modules Thyristor/Diode Modules IXYS Corporation
  MCD44-16IO1B Thyristor Modules Thyristor/Diode Modules IXYS Corporation

MII100-12A3 Summary of contents

  • Page 1

    ... Insulating material Mounting torque (module) d (teminals) d Creepage distance on surface S d Strike distance through air A a Max. allowable acceleration Weight Typical Data according to a single IGBT/FRED unless otherwise stated. © 2000 IXYS All rights reserved MID Maximum Ratings 1200 = 20 kW 1200 GE ±20 ± ...

  • Page 2

    ... T = 25° 80° - 125° 600 thJC R with heatsink compound thJS © 2000 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 1200 4 25° 125°C 7.5 J 2.2 5.5 0.75 0.33 100 50 = 125°C J 650 50 12.1 10 ...

  • Page 3

    ... 100 Fig. 3 Typ. transfer characteristics 600V 75A 100 200 300 Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved V =17V GE 15V 13V I C 11V 9V 2.5 3 400 MII 100-12 A3 MID 100-12 A3 MDI 100-12 A3 175 T = 125° 150 ...

  • Page 4

    ... A 160 I CM 120 125° < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved 160 120 E t off t d(on 600V ±15V 125°C J ...

Related keywords:

  • mii100-12a3
  • MII100-12A3 datasheet
  • MII100-12A3 data sheet
  • MII100-12A3 pdf datasheet
  • MII100-12A3 component
  • MII100-12A3 part
  • MII100-12A3 distributor
  • MII100-12A3 RoHS
  • MII100-12A3 datasheet download