MUBW40-12T7 IXYS, MUBW40-12T7 Datasheet - Page 2

• Manufacturer Part Number: MUBW40-12T7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW40-12T7

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 62A
• Current - Collector Cutoff (max): 1.75mA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 220W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 80
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 62
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 44
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.0
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.6
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.7
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
E
R
© 2007 IXYS All rights reserved
Output Inverter T1 - T6
C25
C80
CM
CES
GES
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
d(off)
f
rr
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
F
rec(off)
ies
thJC
thJC
Gon
Conditions
T
Continuous
T
T
RBSOA; V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
C
C
C
R
CE
CE
CE
CE
CE
= 40 A; V
= 30 A; di
= 1.5 mA; V
= 40 A; V
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
= 600 V; V
Inductive load, T
V
V
= 25°C to 150°C
= 900 V; V
= V
= 600V; V
= 0 V; V
= 25 V; V
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
F
GE
GE
/dt = -1100 A/µs; T
= ± 15 V; R
GE
GE
GE
GE
= 0 V; T
= 15 V; T
GE
= ± 20 V
= 0 V; T
= 0 V; f = 1 MHz
= 15 V; I
= 0 V
= V
= ± 15 V; R
C
G
= 40 A
= 27 Ω
VJ
CE
T
T
T
VJ
VJ
= 125°C
VJ
VJ
VJ
VJ
G
= 25°C
= 125°C
C
= 25°C
= 25°C
= 125°C
= 27 Ω; T
= 125°C
= 35 A
G
= 27 Ω; T
(T
VJ
VJ
= 125°C
= 25°C, unless otherwise specified)
VJ
= 125°C
VJ
= 125°C
min.
min.
Characteristic Values
Characteristic Values
5
Maximum Ratings
Maximum Ratings
520
180
330
typ.
typ.
2.0
2.4
4.7
2.5
1.9
1.8
90
50
90
51
1200
± 20
V
3
4
100
220
CES
62
44
10
50
33
max.
max.
1.75 mA
1.19 K/W
400
2.6
6.5
0.6 K/W
3.0
2.2
mA
mJ
mJ
mJ
nC
nA
nF
µs
ns
ns
ns
ns
ns
W
A
A
V
V
A
A
A
V
V
V
V
V
A
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
T1 - T6 / D1 - D6
IGBT (typ. at V
Free Wheeling Diode (typ. at T
T7 / D7
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
D11 - D16
Rectifier Diode (typ.)
T1 - T6 / D1 - D6
IGBT (typ.)
Free Wheeling Diode (typ.)
T7 / D7
IGBT (typ.)
Free Wheeling Diode (typ.)
C
C
C
C
C
C
C
C
th1
th2
th1
th2
th1
th1
th2
th2
= 0.116 J/K; R
= 0.879 J/K; R
= 0.156 J/K; R
= 1.162 J/K; R
= 0.043 J/K; R
V
V
V
= 0.106 J/K; R
= 0.79 J/K; R
= 0.54 J/K; R
V
0
0
0
0
MUBW 40-12 T7
C
C
= 1.37 V; R
= 0.83 V; R
= 1.39 V; R
= 1.26V; R
V
th1
th2
0
GE
GE
= tbd; R
= tbd; R
= tbd; R
= 15 V; T
= 15 V; T
th2
th2
0
th1
th2
th1
th2
th1
0
0
0
th1
th1
th2
0
J
= 15 m Ω
= 11 m Ω
= 56 m Ω
= tbd
= 0.239 K/W
= 0.462 K/W
= 62 m Ω
= 125°C)
= 0.973 K/W
= 0.217 K/W
= 0.545 K/W
= 0.155 K/W
= 2.738 K/W
= tbd
= tbd
= 1.06 K/W
J
J
= 125°C)
= 125°C)
J
J
= 125°C)
= 125°C)
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