CM200E3U-12H Powerex Inc, CM200E3U-12H Datasheet - Page 2

• Manufacturer Part Number: CM200E3U-12H
• Description: IGBT MOD CHOP 600V 200A U SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200E3U-12H

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 17.6nF @ 10V
• Power - Max: 650W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 600V
• Current: 200A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

120
120
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200E3U-12H
Chopper IGBTMOD™ U-Series Module
200 Amperes/600 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Emitter-Collector Voltage
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
c
c
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
c
= 25 C, T
j
= 25 C unless otherwise specified
j
j
V
= 25 C unless otherwise specified
V
Symbol
Symbol
CE(sat)
t
t
150 C)
I
C
I
GE(th)
V
V
C
C
d(on)
d(off)
CES
GES
Q
j
Q
Q
t
t
FM
oes
EC
res
t
t
ies
rr
rr
r
G
= 25 C unless otherwise specified
f
rr
rr
V
I
I
C
CC
C
I
I
I
I
= 200A, V
F
F
= 200A, V
E
E
Load Switching Operation
= 300V, I
V
= 200A, Clamp Diode Part
= 200A, Clamp Diode Part
V
V
= 200A, di
= 200A, di
I
C
V
CC
R
GE
I
V
CE
E
CE
GE1
G
= 20mA, V
di
= 200A, V
Test Conditions
Test Conditions
= 300V, I
F
= V
= V
= 3.1 , Resistive
= 10V, V
/dt = -400A/ s
GE
= V
C
GE
CES
GES
j
) does not exceed T
= 200A, V
E
E
Symbol
GE2
= 15V, T
V
V
= 15V, T
/dt = -400A/ s
/dt = -400A/ s
T
V
I
I
, V
, V
CES
GES
CM
EM
P
I
I
T
stg
–
–
–
CE
iso
GE
C
C
E
GE
c
j
GE
CE
= 15V,
= 200A,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125 C
= 25 C
= 15V
j(max)
rating.
CM200E3U-12H
Min.
Min.
-40 to 150
-40 to 125
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2500
400*
400*
600
650
310
200
200
31
40
20
400
Typ.
Typ.
–
–
6
2.4
2.6
–
–
–
–
–
–
–
–
–
–
0.48
–
0.48
150
400
300
300
160
160
17.6
Max.
Max.
1
0.5
7.5
3.0
–
–
2.6
2.6
9.6
2.6
–
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
in-lb
in-lb
Volts
Volts
Volts
Volts
Volts
mA
C
C
nC
ns
ns
ns
ns
ns
ns
nf
nf
nf
A
C
C