CM50DY-24H Powerex Inc, CM50DY-24H Datasheet - Page 2

• Manufacturer Part Number: CM50DY-24H
• Description: IGBT MOD DUAL 1200V 50A H SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM50DY-24H

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 10nF @ 10V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 400W
• Collector Emitter Voltage V(br)ceo: 3.4V
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: 835-1096; CM50DY-24H

254
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
res
t
ies
t
= 25 C unless otherwise specified
rr
G
r
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
V
V
C
CC
GE
GE1
I
I
= 50A, V
E
E
= 600V, I
V
V
V
= 50A, di
= 50A, di
= 0V, V
I
I
CE
GE
C
C
I
CC
= V
E
= 5mA, V
= 50A, V
Test Conditions
= 50A, V
Test Conditions
Test Conditions
= V
= V
GE2
= 600V, I
GE
Per FWDi
Per IGBT
CE
CES
GES
C
E
E
= 15V, R
= 15V, T
= 50A, V
/dt = –100A/ s
/dt = –100A/ s
= 10V, f = 1MHz
, V
, V
GE
CE
GS
C
GE
CE
= 15V
= 10V
= 50A,
= 0V
j
G
= 0V
= 0V
GS
= 150 C
= 6.3
Symbol
V
V
V
= 15V
T
I
I
RMS
CES
GES
P
CM
FM
I
T
I
stg
–
–
–
C
F
d
j
Min.
Min.
Min.
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CM50DY-24H
–40 to 150
–40 to 125
1200
2500
100*
100*
400
190
50
50
17
26
20
2.25
0.37
Typ.
250
Typ.
Typ.
6.0
2.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.075
Max.
3.4**
Max.
Max.
0.31
0.70
200
150
350
250
1.0
0.5
7.5
3.5
10
–
–
80
–
3.5
2
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C