MDI150-12A4 IXYS, MDI150-12A4 Datasheet - Page 4

• Manufacturer Part Number: MDI150-12A4
• Description: MOD IGBT BUCK 1200V 180A Y3-DCB
• Manufacturer: IXYS

Specifications of MDI150-12A4

• Configuration: Single
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 100A
• Current - Collector (ic) (max): 180A
• Current - Collector Cutoff (max): 7.5mA
• Input Capacitance (cies) @ Vce: 6.6nF @ 25V
• Power - Max: 760W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Y3-DCB
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 180
• Ic80, Tc = 80°c, Igbt, (a): 120
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 11.5
• Rthjc, Max, Igbt, (k/w): 0.17
• If25, Tc = 25°c, Diode, (a): 200
• If80, Tc = 80°c, Diode, (a): 130
• Rthjc, Max, Diode, (k/w): 0.33
• Package Style: Y3-DCB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
E
E
I
CM
on
on
240
200
160
120
mJ
60
40
20
80
40
50
mJ
40
30
20
10
A
0
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
= 100A
= 600V
200
= ±15V
8
50
times versus collector current
times versus gate resistor
RBSOA
400
16
600
24
100
R
T
V
J
CEK
G
= 125°C
= 10
< V
800 1000 1200
32
W
CES
150
R
I
G
C
40
V
V
V
R
T
CE
t
J
CE
GE
G
d(on)
t
48
r
= 10
= 125°C
= 600V
= ±15V
200
E
t
W
E
W
t
d(on)
r
on
V
A
on
56
120
80
40
0
250
200
150
100
50
0
ns
ns
t
t
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
mJ
0.00001 0.0001
30
20
10
20
15
10
0
5
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
MII 150-12 A4
V
V
I
T
C
J
CE
GE
= 125°C
= 100A
= 600V
= ±15V
8
single pulse
50
times versus collector current
times versus gate resistor
16
diode
0.001
100
24
32
0.01
IGBT
MID 150-12 A4
MDI 150-12 A4
150
R
G
I
40
C
t
E
off
V
V
R
T
t
0.1
d(off)
CE
GE
J
G
= 10
= 125°C
48
= 600V
= ±15V
200
t
E
t
W
d(off)
150-12
s
f
W
t
off
A
f
56
1
600
400
200
0
ns
1600
1200
800
400
0
ns
4 - 4
t
t