CM200DX-24S Powerex Inc, CM200DX-24S Datasheet - Page 5

• Manufacturer Part Number: CM200DX-24S
• Description: IGBT MOD DUAL 1200V 200A NX SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: Dualr

Specifications of CM200DX-24S

• Featured Product: 6th Generation NX-S Series IGBTs
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 1500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Module Configuration: Dual
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 1.5kW
• Operating Temperature Range: -40°C To +150°C
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Leaded Process Compatible: Yes
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 200A
• Circuit Configuration: Dual
• Recommended Gate Driver: VLA504-01
• Recommended Dc To Dc Converter: VLA106-15242
• Interface Circuit Ref Design: VLA536-01R
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1123

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM200DX-24S
Dual IGBTMOD™ NX-S Series Module
200 Amperes/1200 Volts
04/10 Rev. 0
400
350
300
250
200
150
100
10
10
10
10
10
10
50
0
3
2
1
3
2
1
10
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
T
25° C
j
(INVERTER PART - CHIP - TYPICAL)
(INVERTER PART - CHIP - TYPICAL)
15
=
FORWARD CHARACTERISTICS
0.5
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
2
T
T
T
j
j
j
GATE RESISTANCE, R
= 25°C
= 125°C
= 150°C
13.5
SWITCHING TIME VS.
FREE-WHEEL DIODE
GATE RESISTANCE
10
1.0
0
V
4
GE
1.5
= 20V
t
d(on)
6
10
2.0
V
V
I
T
Inductive Load
C
12
11
G
10
CC
GE
j
9
1
, (Ω)
t
= 150°C
= 200A
t
f
r
CE
EC
= 600V
= ±15V
, (VOLTS)
, (VOLTS)
8
2.5
t
d(off)
10
3.0
10
2
10
10
10
10
10
10
10
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-1
-2
0
2
1
0
3
2
1
10
10
SATURATION VOLTAGE CHARACTERISTICS
0
REVERSE RECOVERY CHARACTERISTICS
-1
1
COLLECTOR-EMITTER VOLTAGE, V
V
V
(INVERTER PART - CHIP - TYPICAL)
GE
GE
50
COLLECTOR CURRENT, I
EMITTER CURRENT, I
(INVERTER PART - TYPICAL)
= 0V
= 15V
(INVERTER PART - TYPICAL)
I
t
T
T
T
rr
rr
100
j
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
= 150°C
10
150
0
200
10
2
250
E
, (AMPERES)
C
10
, (AMPERES)
V
V
R
T
Inductive Load
j
CC
GE
G
1
300 350
= 150°C
C
C
C
= 3.9Ω
CE
ies
oes
res
= 600V
= ±15V
, (VOLTS)
400
10
10
2
3
10
10
10
20
15
10
10
5
0
8
6
4
2
0
3
2
1
10
SATURATION VOLTAGE CHARACTERISTICS
0
6
1
t
I
V
d(on)
C
(INVERTER PART - CHIP - TYPICAL)
CC
100 200 300
GATE-EMITTER VOLTAGE, V
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
= 200A
8
(INVERTER PART - TYPICAL)
= 600V
GATE CHARGE VS. V GE
COLLECTOR-EMITTER
10
GATE CHARGE, Q
(INVERTER PART)
HALF-BRIDGE
t
d(off)
12
10
I
I
C
2
400
C
14
= 400A
= 200A
G
C
, (nC)
, (AMPERES)
V
V
R
T
Inductive Load
t
t
500 600
GE
f
r
j
16
CC
GE
G
I
C
= 150°C
, (VOLTS)
= 3.9Ω
= 80A
T
= 600V
= ±15V
j
= 25°C
18
700
10
20
3
5