MWI100-12A8 IXYS, MWI100-12A8 Datasheet
MWI100-12A8
Manufacturer Part Number
MWI100-12A8
Description
MOD IGBT SIXPACK RBSOA 1200V E3
Manufacturer
IXYS
Datasheet
1.MWI100-12A8.pdf
(4 pages)
Specifications of MWI100-12A8
Configuration
Three Phase Inverter
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 100A
Current - Collector (ic) (max)
160A
Current - Collector Cutoff (max)
6.3mA
Input Capacitance (cies) @ Vce
6.5nF @ 25V
Power - Max
640W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E3
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
160A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
160
Ic80, Tc = 80°c, Igbt, (a)
110
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
14.6
Rthjc, Max, Igbt, (k/w)
0.19
If25, Tc = 25°c, Diode, (a)
200
If80, Tc = 80°c, Diode, (a)
130
Package Style
E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MWI100-12A8
Manufacturer:
VISHAY
Quantity:
5 600
Part Number:
MWI100-12A8
Quantity:
60
Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
IGBTs
C25
C80
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
tot
CE(sat)
GE(th)
on
off
ies
thJC
Gon
Conditions
T
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 4 mA; V
= 100 A; V
= 25°C
= 80°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= V
= V
= 600 V; V
= ± 15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
CES
= 600 V; I
= ± 15 V; R
; V
; V
GE
GE
GE
GE
GE
GE
GE
= ± 20 V
G
= V
= 0 V; T
= ± 15 V; R
= 15 V; T
= 0 V; f = 1 MHz
= 6.8 Ω; T
C
= 15 V; I
G
CE
= 100 A
= 6.8 Ω
VJ
T
= 125°C
VJ
VJ
T
VJ
VJ
= 25°C
= 125°C
C
G
VJ
= 25°C
= 125°C
= 100 A
= 6.8 Ω; T
= 125°C
(T
13, 21
14, 20
VJ
= 25°C, unless otherwise specified)
1
2
3
4
VJ
= 125°C
min.
4.5
5
6
7
8
Characteristic Values
I
V
CM
CEK
Maximum Ratings
=
16.1
14.6
100
600
475
typ.
≤ V
2.2
2.5
6.5
60
90
1200
± 20
4
160
110
200
640
10
11
12
CES
10
9
max.
0.19 K/W
400
2.6
6.5
6.3 mA
mA
µs
mJ
mJ
W
nC
nA
nF
ns
ns
ns
ns
V
V
A
A
A
19
17
15
V
V
V
I
V
V
See outline drawing for pin arrangement
Features
€ €
€ €
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€ €
€ €
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Advantages
€ €
€ €
€ €
Typical Applications
€ €
€ €
€ €
C25
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
space savings
reduced protection circuits
package designed for wave soldering
AC motor control
AC servo and robot drives
power supplies
CES
CE(sat) typ.
MWI 100-12 A8
= 160 A
= 1200 V
= 2.2 V
20070912a
E72873
1 - 4
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MWI100-12A8 Summary of contents
Page 1
... Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 13 ...
Page 2
... Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 200 130 Characteristic Values min. typ. = 25°C 2.3 ...
Page 3
... V Fig. 3 Typ. transfer characteristics 600 100 100 200 300 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 300 250 I C 200 11 V 150 100 300 250 I F 200 ...
Page 4
... V = 600 ± off I = 100 125° Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 0.01 single pulse 0.001 0.0001 0.001 0.01 0.1 Fig. 12 Typ. transient thermal impedance 150 200 Ω diode IGBT MWI100-12A8 20070912a ...