CM200DU-24H Powerex Inc, CM200DU-24H Datasheet - Page 2

• Manufacturer Part Number: CM200DU-24H
• Description: IGBT MOD DUAL 1200V 200A U SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM200DU-24H

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 30nF @ 10V
• Power - Max: 1130W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 1.13kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200DU-24H
Dual IGBTMOD™ U-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
Peak Collector Current (T
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
* Pulse width and repetition rate should be such that the device junction temperature (T
Dynamic Electrical Characteristics, TT
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
c
c
= 25 C)
= 25 C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
150 C)
c
= 25 C)
j
= 25 C unless otherwise specified
j
R
V
R
= 25 C unless otherwise specified
V
Symbol
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
GE(th)
C
V
C
d(on)
d(off)
CES
GES
th(c-f)
Q
Q
t
oes
EC
t
ies
res
t
rr
G
j
r
f
rr
= 25 C unless otherwise specified
Q
D
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
I
C
CC
C
= 200A, V
I
I
= 200A, V
E
E
Load Switching Operation
= 600V, I
V
V
V
= 200A, di
= 200A, di
I
C
V
Per FWDi 1/2 Module
Per IGBT 1/2 Module
I
CC
R
CE
GE
V
E
CE
G
= 20mA, V
GE1
= 200A, V
= 600V, I
= V
= V
= 1.6 , Resistive
= 10V, V
Test Conditions
Test Conditions
Test Conditions
GE
= V
C
GE
CES
GES
j
j
= 200A, V
) does not exceed T
) does not exceed T
E
E
Symbol
= 15V, T
GE2
V
V
= 15V, T
/dt = -400A/ s
/dt = -400A/ s
T
V
I
I
, V
, V
CES
GES
CM
P
EM
T
I
I
stg
–
–
–
iso
CE
C
GE
C
E
GE
c
j
GE
CE
= 15V,
= 200A,
= 10V
= 0V
= 0V
= 0V
= 0V
j
j
GE
= 125 C
= 25 C
= 15V
j(max)
j(max)
rating.
rating.
CM200DU-24H
Min.
Min.
Min.
-40 to 150
-40 to 125
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1200
1130
2500
400*
400*
200
200
400
40
40
20
750
Typ.
Typ.
Typ.
–
–
6
2.9
2.85
–
–
–
–
–
–
–
–
–
1.1
–
–
0.020
200
300
300
350
300
30
10.5
Max.
Max.
Max.
1
0.5
7.5
3.7
–
–
3.2
6
–
0.11
0.18
–
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
Units
Units
Units
in-lb
in-lb
Volts
Volts
Volts
Volts
C
C
mA
C/W
C/W
C/W
nC
ns
ns
ns
ns
ns
nf
nf
nf
A
C