CM400DY-12NF Powerex Inc, CM400DY-12NF Datasheet - Page 3

• Manufacturer Part Number: CM400DY-12NF
• Description: IGBT MOD DUAL 600V 400A NF SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM400DY-12NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 60nF @ 10V
• Power - Max: 1130W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 1.13kW
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 600V
• Current: 400A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA503
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-5015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1017

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400DY-12NF
Dual IGBTMOD™ NF-Series Module
400 Amperes/600 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
800
600
400
200
10
10
10
0
3
2
1
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
=
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
2
1
FREE-WHEEL DIODE
13
15
(TYPICAL)
(TYPICAL)
2
4
8
6
3
T
T
CE
EC
j
j
T
= 25°C
= 125°C
j
, (VOLTS)
4
, (VOLTS)
8
= 25
12
11
10
9
o
C
10
5
R
R
R
Symbol
R
th(j-c)
th(j-c)
th(j-c)
th(c-f)
R
10
10
10
10
G
-1
0
2
1
0
4
3
2
1
'Q
10
Q
D
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
COLLECTOR-CURRENT, I
= 25 °C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
= 15V
= 0V
T
T
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
200
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
T
= 25°C
= 125°C
C
10
Reference Point Under Chips
Point per Outline Drawing
Point per Outline Drawing
0
(TYPICAL)
(TYPICAL)
Per IGBT 1/2 Module,
400
Test Conditions
C
10
, (AMPERES)
1
600
C
C
C
CE
oes
res
ies
, (VOLTS)
C
C
800
Reference
10
Reference
2
10
10
10
10
10
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
1.6
j
—
—
—
—
= 25°C
GATE-EMITTER VOLTAGE, V
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
8
t
t
d(on)
d(off)
COLLECTOR-EMITTER
10
HALF-BRIDGE
0.04
Typ.
—
—
—
—
(TYPICAL)
(TYPICAL)
12
10
2
I
I
I
14
C
C
C
= 800A
= 400A
= 160A
C
0.066
Max.
V
V
R
T
Inductive Load
0.11
0.19
, (AMPERES)
j
—
16
CC
GE
G
GE
16
= 125°C
= 3.1Ω
, (VOLTS)
= 300V
= ±15V
t
t
f
r
18
°C/W
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3