CM900DU-24NF Powerex Inc, CM900DU-24NF Datasheet - Page 3

• Manufacturer Part Number: CM900DU-24NF
• Description: IGBT MOD DUAL 1200V 900A NF MEGA
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM900DU-24NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 900A
• Current - Collector (ic) (max): 900A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 140nF @ 10V
• Power - Max: 2550W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 2.55kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 13
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 900A
• Circuit Configuration: Dual
• Rohs Compliant: No
• Recommended Gate Driver: VLA500
• Interface Circuit Ref Design: BG2A-NF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: 835-1027

CM900DU-24NF
Mega Power Dual™ IGBTMOD
900 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
1800
1600
1400
1200
1000
800
600
400
200
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
T
GE
20V
j
1
GATE-EMITTER VOLTAGE, V
= 25°C
=
OUTPUT CHARACTERISTICS
2
4
COLLECTOR-EMITTER
I
I
C
C
= 360A
3
= 900A
15
13
(TYPICAL)
(TYPICAL)
8
4
5
12
6
GE
7
, (VOLTS)
I
CE
C
8
T
16
, (VOLTS)
= 1800A
j
8
= 25
12
11
10
9
9 10
o
C
20
R
R
R
R
Symbol
R
th(j-c')
th(j-c')
th(j-c)
th(j-c)
th(c-f)
R
1800
1600
1400
1200
1000
800
600
400
200
10
10
10
G
0
4
3
2
Q
0.5
D
Q
D
0
EMITTER-COLLECTOR VOLTAGE, V
V
j
CE
1.0
GATE-EMITTER VOLTAGE, V
= 25°C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
= 10V
Per FWDi 1/2 Module, T
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
T
T
4
j
j
= 25°C
= 125°C
1.5
T
T
FREE-WHEEL DIODE
C
C
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
Reference Point Under Chip
(TYPICAL)
(TYPICAL)
8
Per IGBT 1/2 Module,
2.0
Test Conditions
2.5
12
GE
3.0
, (VOLTS)
T
T
EC
j
j
16
= 25°C
= 125°C
, (VOLTS)
3.5
C
C
C
Reference
Reference
Reference
4.0
20
10
10
10
10
10
-1
0
3
2
1
0
5
4
3
2
1
10
SATURATION VOLTAGE CHARACTERISTICS
0
Min.
—
—
-1
–
–
–
0.35
COLLECTOR-EMITTER VOLTAGE, V
V
V
GE
GE
COLLECTOR-CURRENT, I
300
= 0V
= 15V
T
T
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
600
10
—
—
—
Typ.
–
–
0.016
0
(TYPICAL)
(TYPICAL)
900
1200 1500
C
Max.
10
, (AMPERES)
0.049
0.078
0.021
0.034
–
2.2
1
C
C
C
CE
oes
ies
res
, (VOLTS)
Units
°C/W
°C/W
°C/W
°C/W
°C/W
1800
10
Ω
2
3