GA400TD60U Vishay, GA400TD60U Datasheet
GA400TD60U
Specifications of GA400TD60U
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GA400TD60U Summary of contents
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... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module www.irf.com PD - 50059D GA400TD60U Ultra-Fast Speed IGBT 600 CES V = 1.70V CE (on) typ 15V 400A ...
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... GA400TD60U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 ° 125 C 100 10 = 15V 1 2.5 3.0 5.0 Fig Typical Transfer Characteristics GA400TD60U For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 175 W 10 ° ° ...
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... GA400TD60U 500 400 300 200 100 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0 .50 0. .05 0 .02 0.01 SIN Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs ...
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... Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 1000 R = 100 -60 -40 -20 Fig Typical Switching Losses vs. GA400TD60U = 400V = 270A 400 800 1200 1600 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 360V 800 400 200 100 120 140 160 ° Junction Temperature ( C ) ...
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... GA400TD60U 200 R = Ohm 125 C ° 360V 15V 160 GE 120 200 400 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 1000 100 T = 125° 25° 0.0 2.0 4 ard V o lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current SAFE O PERATING AREA ...
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... ° ° /dt - (A/µs) f Fig Typical Reverse Recovery vs. di www.irf.com /dt Fig Typical Recovery Current vs GA400TD60U ° 5° /dt - (A/µ / ...
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... GA400TD60U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...
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... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 480V Figure 19. Pulsed Collector Current GA400TD60U Test Circuit 480V @25°C C Test Circuit 9 ...
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... GA400TD60U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T Pulse width 50µs; single shot. Case Outline — DUAL INT-A-PAK 107.30 [ 4.224 106.30 4.185 93.30 [ 3.673 ] 92.70 3.650 [.314] 2X MAX 48.30 [ 1.902 ] 47.70 1.878 ...