VID50-06P1

Manufacturer Part NumberVID50-06P1
DescriptionMOD IGBT BOOST/CHOP 600V ECOPAC2
ManufacturerIXYS
VID50-06P1 datasheets

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Warranty: 60 days

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Specifications of VID50-06P1

ConfigurationSingleIgbt TypeNPT
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.9V @ 15V, 50A
Current - Collector (ic) (max)42.5ACurrent - Collector Cutoff (max)600µA
Input Capacitance (cies) @ Vce16nF @ 25VPower - Max130W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseECO-PAC2
Channel TypeNCollector-emitter Voltage600V
Gate To Emitter Voltage (max)±20VMountingScrew
Operating Temperature (min)-40COperating Temperature (max)150C
Operating Temperature ClassificationAutomotiveLead Free Status / RoHS StatusLead free / RoHS Compliant
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IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VII
VIO
L9
X13
E2
NTC
A1
X15
S18
K10
X16
IGBTs
Symbol
Conditions
V
T
= 25°C to 150°C
CES
VJ
V
GES
I
T
= 25°C
C25
C
I
T
= 80°C
C80
C
= 33 Ω; T
I
V
= ±15 V; R
CM
GE
G
V
RBSOA, Clamped inductive load; L = 100 µH
CEK
t
V
= V
; V
= ±15 V; R
CES
GE
SC
CE
(SCSOA)
non-repetitive
P
T
= 25°C
tot
C
Symbol
Conditions
V
I
= 50 A; V
= 15 V; T
CE(sat)
C
GE
T
V
I
= 0.7 mA; V
= V
GE(th)
C
GE
CE
I
V
= V
;
V
= 0 V; T
CES
CE
CES
GE
= ± 20 V
I
V
= 0 V; V
GES
CE
GE
t
d(on)
t
Inductive load, T
= 125°C
r
VJ
t
V
= 300 V; I
= 30 A
d(off)
CE
C
= 33 Ω
t
V
= 15/0 V; R
f
GE
G
E
on
E
off
C
V
= 25 V; V
= 0 V; f = 1 MHz
ies
CE
GE
R
(per IGBT)
thJC
R
with heatsink compound (0.42 K/m.K; 50 µm)
thJH
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
VID
VDI
L9
X15
L9
T16
NTC
X16
F1
Maximum Ratings
600
± 20
42.5
29
= 125°C
60
VJ
V
CES
= 33 Ω; T
= 125°C
10
VJ
G
130
Characteristic Values
(T
= 25°C, unless otherwise specified)
VJ
min.
typ.
max.
= 25°C
2.4
VJ
= 125°C
2.9
VJ
4.5
= 25°C
VJ
T
= 125°C
VJ
100
50
50
270
40
1.4
1.0
16
0.96 K/W
1.92
VDI 50-06P1
VII 50-06P1
VID 50-06P1
VIO 50-06P1
I
= 42.5 A
C25
V
= 600 V
CES
V
= 2.4 V
CE(sat) typ.
X15
NTC
X16
Pin arangement see outlines
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
V
- fast switching
V
• FRED diodes
- fast reverse recovery
A
- low forward voltage
A
• Industry Standard Package
A
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
µs
Advantages
• space and weight savings
W
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
2.9
V
• power supplies
V
• welding inverters
6.5
V
0.6 mA
Recommended replacement:
1.7 mA
Please contact your local
nA
sales office
ns
ns
ns
ns
mJ
mJ
nF
K/W
B3
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VID50-06P1 Summary of contents

  • Page 1

    ... E off MHz ies (per IGBT) thJC R with heatsink compound (0.42 K/m.K; 50 µm) thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved VID VDI L9 X15 L9 T16 NTC X16 F1 Maximum Ratings 600 ± 125° ...

  • Page 2

    ... Strike distance in air (Pin to heatsink) A Weight Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved Maximum Ratings 30 19 Characteristic Values min. ...

  • Page 3

    ... Fig. 3 Typ. transfer characteristics 300 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved I C 11V 9V 25T60 25T60 25T60 120 nC 160 Q G VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 ...

  • Page 4

    ... Fig. 9 Typ. turn on energy and switching Ω 125° 100 200 300 400 Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved off d(on 1,0 20 0,5 25T60 ...