IXFN280N085 IXYS, IXFN280N085 Datasheet - Page 3

• Manufacturer Part Number: IXFN280N085
• Description: MOSFET N-CH 85V 280A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN280N085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 280A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 580nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0044 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 280 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 280
• Rds(on), Max, Tj=25°c, (?): 0.0044
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 580
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS Corporation, All rights reserved
350
300
250
200
150
100
220
200
180
160
140
120
100
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
80
60
40
20
0
0
0.0
-50
-50
Fig. 3. R
V
GS
Fig. 1. Extended Output Characteristics
-25
-25
= 10V
Fig. 5. Maximum Drain Current vs.
0.5
External Lead Current Limit
V
GS
DS(on)
vs. Junction Temperature
= 10V
0
0
T
T
9V
8V
C
J
1.0
Case Temperature
- Degrees Centigrade
- Degrees Centigrade
Normalized to I
25
25
V
DS
@ 25ºC
7V
6V
5V
- Volts
1.5
50
50
I
D
= 280A
75
75
2.0
D
= 140A Value
100
100
I
D
= 140A
2.5
125
125
150
150
3.0
300
250
200
150
100
300
275
250
225
200
175
150
125
100
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
50
75
50
25
0
0
0.0
0.4
0
Fig. 4. R
V
GS
0.5
50
= 10V
0.5
Fig. 6. Forward Voltage Drop of
Fig. 2. Output Characteristics
DS(on)
T
V
100
0.6
J
GS
= 125ºC
1.0
vs. Drain Current
= 10V
Normalized to I
I
Intrinsic Diode
D
9V
8V
V
V
DS
- Amperes
150
SD
0.7
@ 125ºC
- Volts
- Volts
1.5
IXFN280N085
200
0.8
7V
6V
5V
2.0
D
T
J
T
T
250
= 140A Value
0.9
J
J
= 25ºC
= 125ºC
= 25ºC
IXYS REF: F_280N085(9Y-N17)12-02-08-A
2.5
300
1.0
350
3.0
1.1