IXTN90N25L2 IXYS, IXTN90N25L2 Datasheet - Page 4

• Manufacturer Part Number: IXTN90N25L2
• Description: MOSFET N-CH 90A 250V SOT-227
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTN90N25L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 33 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 640nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 735W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.033
• Ciss, Typ, (pf): 23000
• Qg, Typ, (nc): 640
• Trr, Typ, (ns): 266
• Pd, (w): 735
• Rthjc, Max, (k/w): 0.17
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
100
160
140
120
100
280
240
200
160
120
80
60
40
20
80
40
0
0
3.5
0.3
0
0.4
4.0
f
5
= 1 MHz
0.5
Fig. 9. Forward Voltage Drop of
4.5
10
T
0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
J
5.0
= 125ºC
0.7
Intrinsic Diode
15
V
V
5.5
V
SD
DS
GS
0.8
- Volts
- Volts
- Volts
6.0
20
0.9
T
T
J
J
6.5
= 25ºC
= 125ºC
25
1.0
- 40ºC
25ºC
C iss
C oss
C rss
7.0
1.1
30
7.5
1.2
35
8.0
1.3
1.4
8.5
40
1.000
0.100
0.010
0.001
120
110
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0.00001
0
8
6
4
2
0
0
0
V
I
I
D
G
100
DS
= 45A
= 10mA
Fig. 12. Maximum Transient Thermal
20
0.0001
= 125V
200
Fig. 8. Transconductance
40
300
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
- NanoCoulombs
I
D
Impedance
400
60
- Amperes
IXTN90N25L2
0.01
500
80
600
T
J
0.1
100
= - 40ºC
700
120
800
25ºC
1
125ºC
900
140
1000
10