IXFN320N17T2 IXYS, IXFN320N17T2 Datasheet - Page 6

• Manufacturer Part Number: IXFN320N17T2
• Description: MOSFET N-CH 170V 260A SOT227
• Manufacturer: IXYS
• Series: GigaMOS™r
• Type: GigaMOS Trench T2 HiperFetr

Specifications of IXFN320N17T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 170V
• Current - Continuous Drain (id) @ 25° C: 260A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 640nC @ 10V
• Input Capacitance (ciss) @ Vds: 45000pF @ 25V
• Power - Max: 1070W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 170 ns
• Fall Time: 230 ns
• Supply Current: 100 A
• Maximum Power Dissipation: 1070 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 115 ns
• Maximum Turn-on Delay Time: 46 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 260 A
• Output Voltage: 170 V
• Vdss, Max, (v): 170
• Id(cont), Tc=25°c, (a): 260
• Rds(on), Max, Tj=25°c, (?): 0.0052
• Ciss, Typ, (pf): 45000
• Qg, Typ, (nc): 640
• Pd, (w): 1070
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFN320N17T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
.sadgsfgsf
0.200
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_320N17T2(9V)9-02-09