IXFN44N80 IXYS, IXFN44N80 Datasheet
IXFN44N80
Specifications of IXFN44N80
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IXFN44N80 Summary of contents
Page 1
... I = 8mA GS(th ±20V GSS DSS DS DSS 10V 0.5 • I DS(on D25, © 2007 IXYS CORPORATION, All rights reserved IXFN44N80 rr Maximum Ratings 800 = 1MΩ 800 GS ±20 ±30 44 176 ≤ DSS 700 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min. ...
Page 2
... Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values Min. ...
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... Volts DS 2 10V GS 2 125 1.2 0 Amperes -50 - Degrees C C © 2007 IXYS CORPORATION, All rights reserved 100 125 150 IXFN44N80 125 Volts DS 2 10V GS 2.2 1 44A D 1.6 1.3 1 100 T - Degrees 125 3.5 4.0 4 Volts 22A D 125 150 5.0 5.5 ...
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... Gate Charge - nC 100 125 0.2 0.4 0.6 0 Volts SD 1.000 0.100 0.010 0.001 - IXYS reserves the right to change limits, test conditions, and dimensions. 30000 10000 1000 300 400 1.0 1.2 1 Pulse Width - Seconds Ciss Coss Crss 100 Volts IXFN 44N80 ...