IXFN360N10T IXYS, IXFN360N10T Datasheet - Page 4

• Manufacturer Part Number: IXFN360N10T
• Description: MOSFET N-CH 100V 360A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN360N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 505nC @ 10V
• Input Capacitance (ciss) @ Vds: 36000pF @ 25V
• Power - Max: 830W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.0026
• Ciss, Typ, (pf): 33000
• Qg, Typ, (nc): 525
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1.00
0.10
0.01
0.00
400
360
320
280
240
200
160
120
10
80
40
0.00001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
50
D
G
DS
= 180A
= 10mA
40
= 50V
100
Fig. 7. Transconductance
80
150
Fig. 9. Gate Charge
Q
0.0001
G
200
I
- NanoCoulombs
120
D
- Amperes
250
T
160
J
300
= - 40ºC
Fig. 11. Maximum Transient Thermal Impedance
350
200
25ºC
150ºC
0.001
400
240
450
Pulse Width - Seconds
280
500
0.01
100,000
10,000
1,000
100
360
320
280
240
200
160
120
80
40
0
0.3
0
f
0.4
= 1 MHz
5
Fig. 8. Forward Voltage Drop of
0.1
0.5
10
T
Fig. 10. Capacitance
J
= 150ºC
Intrinsic Diode
0.6
15
V
V
SD
DS
0.7
- Volts
20
- Volts
IXFN360N10T
0.8
1
25
C iss
C rss
C oss
T
J
0.9
= 25ºC
30
1.0
35
10
1.1
40