IXFE44N50QD3 IXYS, IXFE44N50QD3 Datasheet
IXFE44N50QD3
Manufacturer Part Number
IXFE44N50QD3
Description
MOSFET N-CH 500V 39A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE48N50QD2.pdf
(2 pages)
Specifications of IXFE44N50QD3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
8000pF @ 25V
Power - Max
400W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
39 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
500
Id25, Tc = 25°c, (a)
39
Id90, Tc = 90°c, (a)
29
Rds(on), Max, Tj = 25°c, (mohms)
120
Tf, Typ, (ns)
10
Tr, Typ, (ns)
22
Rthjc, Max, (ºc/w)
0.31
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Buck & Boost Configurations for
PFC & Motor Control Circuits
Symbol
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2004 IXYS All rights reserved
V
V
V
V
I
I
I
E
E
dv/dt
P
V
I
I
P
T
T
T
V
M
Weight
DM
D25
AR
FAVM
FRM
J
JM
stg
DGR
GS
GSM
AR
AS
D
RRM
D
ISOL
DSS
d
T
Continuous
Transient
T
I
T
T
Test Conditions
T
T
T
pulse width limited by max. T
T
T
T
tp <10 µs; pulse width limited by T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque (M4)
S
ISOL
J
C
C
C
J
C
C
J
C
C
C
= 70°C; rectangular, d = 0.5
= 25°C
= 25°C,
= 25°C
= 25°C
= 25°C to 150°C
= 25°C
= 25°C
= 25°C
= 25°C to 150°C; R
≤ I
≤150°C, R
≤ 1 mA
DM
TM
, -di/dt ≤ 100 A/µs, V
G
= 2 Ω
t = 1 min
t = 1 s
GS
IXFE44N50QD2 IXFE44N50QD3
IXFE48N50QD2 IXFE48N50QD3
= 1 MΩ
DD
JM
≤ V
44N50Q
48N50Q
44N50Q
48N50Q
DSS
J
,
D2
-40 ... +150
-40 ... +150
2
Maximum Ratings
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
500
500
±20
±30
176
192
400
600
180
150
800
2.5
39
41
48
60
15
19
60
3
1
V/ns
mJ
V~
V~
° C
° C
° C
W
W
V
V
V
V
A
A
A
A
A
V
A
A
g
J
500 V
500 V
4
V
DSS
2 = Gate
1 = Source
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
ISOPLUS 227
topologies
Conforms to SOT-227B outline
Isolation voltage 3000 V~
Low R
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<60 pF)
- reduced RFI
Ultra-fast FRED diode with soft
reverse recovery
Popular Buck & Boost circuit
Switch reluctance motor controls
Power factor controls and buck
regulators
DC servo and robotic drives
DC choppers
Easy to mount with 2 screws
Space savings
Tightly coupled FRED
DS (on)
I
39 A
41A
D (cont)
D3
2
TM
HDMOS
(IXFE)
2
4 = Anode/Cathode
3 = Drain
0.12 Ω 35 ns
0.11 Ω 35 ns
R
TM
DS98903C(03/04)
DS(on)
process
3
3
1
1
4
t
rr
4
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IXFE44N50QD3 Summary of contents
Page 1
... ISOL ≤ ISOL M Mounting torque d Terminal connection torque (M4) Weight IXYS reserves the right to change limits, test conditions, and dimensions. © 2004 IXYS All rights reserved IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 2 D2 Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 44N50Q 39 48N50Q ...
Page 2
... Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXFE44N50 I = 22A T IXFE48N50 I = 24A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXFE44N50QD2 IXFE44N50QD3 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 500 25° ...