IXTN40P50P IXYS, IXTN40P50P Datasheet

MOSFET P-CH 500V 40A SOT227

IXTN40P50P

Manufacturer Part Number
IXTN40P50P
Description
MOSFET P-CH 500V 40A SOT227
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTN40P50P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
205nC @ 10V
Input Capacitance (ciss) @ Vds
11500pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
-500.0
Id(cont), Tc=25°c, (a)
-40.0
Rds(on), Max, Tj=25°c, (?)
0.230
Ciss, Typ, (pf)
11500
Qg, Typ, (nc)
205
Trr, Typ, (ns)
477
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= -10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
= - 250μA
D
≤ V
= -1mA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
t = 1 minute
t = 1 second
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTN40P50P
- 500
- 2.0
-55 ... +150
-55 ... +150
Min.
Maximum Ratings
Characteristic Values
1.3/11.5
1.5/13
- 500
- 500
- 120
2500
3000
- 40
- 40
±20
±30
890
150
300
260
3.5
Typ.
30
10
- 4.0
±100 nA
- 250 μA
Nm/lb.in.
Nm/lb.in.
- 50 μA
Max.
230 mΩ
V/ns
V~
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
miniBLOC, SOT-227
Features
Advantages
Applications
G = Gate
S = Source
Either Source Terminal at miniBLOC
can be used as Main or Kelvin Source.
D25
International Standard Package
Rugged PolarP
Avalanche Rated
Low Package Inductance
Easy to Mount
Space Savings
High Power Density
High-Side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DS(on)
DSS
E153432
G
≤ ≤ ≤ ≤ ≤
=
=
S
D = Drain
TM
- 500V
- 40A
Process
230mΩ Ω Ω Ω Ω
D
DS99936B(03/09)
S

Related parts for IXTN40P50P

IXTN40P50P Summary of contents

Page 1

... GS(th ±20V GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTN40P50P Maximum Ratings - 500 = 1MΩ - 500 GS ±20 ± 120 3.5 ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ. JM 477 14 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTN40P50P Max. SOT-227B (IXTN) Outline (Μ4 σχρεωσ (4ξ) συππλιεδ 0.14 °C/W °C/W Max ...

Page 3

... Fig. 2. Extended Output Characteristics @ 25º -12 -15 - Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 40A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -5 0 -50 - Degrees Centigrade J IXTN40P50P = -10V - -21 -24 -27 - 20A vs 20A D 100 125 150 100 125 150 ...

Page 4

... V - Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC - 40ºC -5.5 -6.0 -6 25ºC J -2.5 -3.0 -3.5 -4.0 - 1,000.0 C iss - 100.0 C oss C rss -25 -30 -35 -40 IXTN40P50P Fig. 8. Transconductance -10 -15 -20 -25 -30 -35 - Amperes D Fig. 10. Gate Charge - 250V 20A ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTN40P50P 0.1 1 IXYS REF: T_40P50P(B9) 03-06-08-A 10 ...

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