IXFN30N120P IXYS, IXFN30N120P Datasheet
IXFN30N120P
Manufacturer Part Number
IXFN30N120P
Description
MOSFET N-CH 1200V 30A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN30N120P.pdf
(4 pages)
Specifications of IXFN30N120P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
310nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.350
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
310
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.140
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN30N120P
Manufacturer:
SIEMENS
Quantity:
1 000
Part Number:
IXFN30N120P
Quantity:
147
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
V
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
ISOL
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
≤ 1mA
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 3mA
= 1mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
t = 1s
t = 1min
JM
IXFN30N120P
1200
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1.3/11.5
1.5/13
1200
1200
2500
3000
± 30
± 40
890
150
300
Typ.
30
75
15
20
30
2
± 300
Max.
350 mΩ
Nm/lb.in.
Nm/lb.in.
6.5
50
5 mA
V/ns
V~
V~
nA
μA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
Applications
V
I
R
t
miniBLOC, SOT-227 B (IXFN)
G = Gate
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•
•
•
•
•
•
Advantages
•
•
•
D25
rr
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power
Applications
High Voltage Discharge circuits in
Laser Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
G
= 1200V
≤ ≤ ≤ ≤ ≤ 350mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
= 30A
S
D = Drain
D
DS99884A (4/08)
S
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IXFN30N120P Summary of contents
Page 1
... GS(th ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXFN30N120P Maximum Ratings 1200 = 1MΩ 1200 GS ± 30 ± ≤ 150° 890 -55 ... +150 150 -55 ... +150 300 t = 1min 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min ...
Page 2
... I = 0.5 • I 104 DSS D D25 137 0.05 Characteristic Values Min. Typ. JM 1.6 14 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN30N120P Max. SOT-227B Outline S Ω 0.14 °C/W °C/W Max 120 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 ...
Page 3
... V = 10V GS 2.6 8V 2.4 2.2 2.0 7V 1.8 1.6 1.4 1.2 1.0 6V 0.8 5V 0.6 0 15A Value 125º 25º IXFN30N120P Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 30A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...
Page 4
... MHz 10,000 1,000 C oss 100 C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC - 40ºC 6 25ºC J 0.9 1 1.1 1.2 1.3 1.000 C iss 0.100 0.010 0.001 IXFN30N120P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 600V 15A 10mA ...