IXFE39N90 IXYS, IXFE39N90 Datasheet
IXFE39N90
Manufacturer Part Number
IXFE39N90
Description
MOSFET N-CH 900V 34A ISOPLUS227
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE39N90.pdf
(2 pages)
Specifications of IXFE39N90
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 19.5A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
375nC @ 10V
Input Capacitance (ciss) @ Vds
13400pF @ 25V
Power - Max
580W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.22 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
34 A
Power Dissipation
580 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
34
Rds(on), Max, Tj=25°c, (?)
0.22
Ciss, Typ, (pf)
13400
Qg, Typ, (nc)
375
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
580
Rthjc, Max, (ºc/w)
0.22
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary Data
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
GSM
AR
AS
J
stg
GH(th)
DSS
DGR
GS
D
ISOL
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Test Conditions
V
V
V
V
V
V
Notes 2, 3
Terminal connection torque
S
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
GS
GS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, Chip capability
= 25 C, Note 1
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
150 C, R
TM
I
1 mA
DM
GS
DSS
, di/dt
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
G
= I
= 2
100 A/ s, V
DS
T
t = 1 min
t = 1 s
= 0
GS
= 1 M
T
T
DD
(T
J
J
J
= 25 C
= 125 C
rr
= 25 C, unless otherwise specified)
V
DSS
min.
900
2.5
Characteristic Values
IXFE 39N90
-40 ... +150
-40 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
900
900
154
580
150
20
30
34
39
64
4
5
max.
200
100
220
5.0
2
D
S
V/ns
m
mJ
mA
V~
V~
nA
W
V
V
A
A
A
C
C
C
A
V
V
V
V
J
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
•
ISOPLUS 227
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Conforms to SOT-227B outline
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low cost
Easy to mount
Space savings
High power density
V
I
R
t
D25
DSS
DS(on)
DS (on)
HDMOS
TM
= 900 V
=
= 220 m
< ns
(IXFE)
G
D = Drain
TM
D
S
DS98920A(12/02)
34 A
process
S
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IXFE39N90 Summary of contents
Page 1
... GH(th GSS DSS DS DSS DS(on Notes 2, 3 © 2002 IXYS All rights reserved IXFE 39N90 Maximum Ratings 900 = 1 M 900 154 DSS 580 -40 ... +150 150 -40 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Characteristic Values ( unless otherwise specified) J min. typ. max. 900 2 ...
Page 2
... Notes: 1. Pulse width limited by T JM. 2. Pulse test, t 300 ms, duty cycle Test current 19 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max ...