VBH40-05B IXYS, VBH40-05B Datasheet
VBH40-05B
Manufacturer Part Number
VBH40-05B
Description
MODULE MOSFET H-BRIDGE V2
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.VBH40-05B.pdf
(3 pages)
Specifications of VBH40-05B
Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
116 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Mounting Type
Chassis Mount
Package / Case
V2-PAK
Vdss, Max, (v)
500
Id25, Tc = 25°c, (a)
45
Id80, Tc = 80°c, (a)
33
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
116
Tf, Typ, (ns)
80
Tr, Typ, (ns)
100
Rthjc, Max, (ºc/w)
0.32
Package Style
V2-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Module with HiPerFET
Single Phase Mains Rectifier Bridge
Preliminary data
Symbol
V
I
I
I
Symbol
V
I
R
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
Mains Rectifier Bridge D1 - D4
FAV25
FAV80
FSM
R
RRM
F
thJC
thJS
Conditions
T
T
T
Conditions
I
V
(per diode)
with heat transfer paste
F
C
C
VJ
R
= 20 A
= 25°C; sine 180°
= 80°C; sine 180°
= V
= 25°C; t = 10 ms sine 50 Hz
RRM
T
T
T
T
VJ
VJ
VJ
VJ
= 125°C
= 25°C
= 25°C
= 125°C
(T
VJ
TM
= 25°C, unless otherwise specified)
H-Bridge and
min.
Characteristic Values
Maximum Ratings
typ.
1.1
1.0
0.4
2.8
1200
400
45
33
max.
0.02 mA
1.42 K/W
1.2
K/W
mA
V
A
A
A
V
V
V
R
V
I
Application
primary side of mains supplied
• welding converters
• switched mode power supplies
• induction heaters
Features
• H-bridge with
• thermistor for internal temperature
• package:
DAV25
HiPerFET
- low R
- unclamped inductive switching
- dv/dt ruggedness
- fast intrinsic reverse diode
- Kelvin source for easy drive
- low inductive, symmetrical current
measurement
- high level of integration - only one
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
DSS
RRM
DSon
required for the whole primary side
power semiconductor module
paths
(UIS) capability
= 500 V
= 116 m Ω Ω Ω Ω Ω
= 1200 V
=
DSon
pin configuration see outlines
TM
VBH 40-05B
technology:
90 A
1 - 3
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VBH40-05B Summary of contents
Page 1
... R RRM T = 125° (per diode) thJC R with heat transfer paste thJS IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved TM H-Bridge and Maximum Ratings 1200 45 33 400 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 2
... F t (diode -di/dt = 200 A/µ thJC R with heat transfer paste thJS Temperature Sensor NTC Symbol Conditions 25° 25/100 © 2006 IXYS All rights reserved Maximum Ratings 500 ± Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. 116 mΩ 25°C ...
Page 3
... A Weight typ. Dimensions 0.0394") Detail Z Ø 6.1 Ø2.5 4x45° 0.5 © 2006 IXYS All rights reserved Maximum Ratings -40...+150 -40...+125 3000 2 - 2.5 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max Detail Y M 2:1 Ø 1.5 (DIN 46 431) Ø 0.5±0.2 Ø ...