VKM40-06P1 IXYS, VKM40-06P1 Datasheet
VKM40-06P1
Manufacturer Part Number
VKM40-06P1
Description
MOSFET H-BRIDGE 600V ECO-PAC2
Manufacturer
IXYS
Datasheet
1.VKM40-06P1.pdf
(3 pages)
Specifications of VKM40-06P1
Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
5.5V @ 3mA
Gate Charge (qg) @ Vgs
220nC @ 10V
Mounting Type
Chassis Mount
Package / Case
ECO-PAC2
Vdss, Max, (v)
600
Id25, Tc = 25°c, (a)
38
Id80, Tc = 80°c, (a)
25
Id90, Tc = 90°c, (a)
25
Rds(on), Max, Tj = 25°c, (mohms)
70
Tf, Typ, (ns)
10
Tr, Typ, (ns)
95
Rthjc, Max, (ºc/w)
0.45
Package Style
ECO-PAC 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VKM40-06P1
Manufacturer:
ISD
Quantity:
301
CoolMOS Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
Low R
Package with Electrically Isolated Base
Preliminary data
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS 2007 All rights reserved
MOSFET
Symbol
V
V
I
I
d
E
E
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
R
Data according ot IEC 60747 refer to a single diode or transistor unless otherwise stated
DSS
GSS
D25
D90
d(on)
r
d(off)
f
GS(th)
GS
V
DSS
AS
AR
DSon
thJC
g
gs
gd
/dt
DSon
, High V
Conditions
T
T
T
V
T
I
I
Conditions
V
V
V
V
V
V
I
per MOSFET
D
D
D
VJ
C
C
VJ
GS
DS
DS
GS
GS
GS
DS
= 25 A; R
= 0 A; L = 36 mH; T
= 20 A; L = 5 mH; T
= 25°C
= 90°C
= 25°C to 50°C
= 50°C
= V
= 0 V; I
= 20 V; I
= ± 20 V; V
= 0 V; V
= 0 V; V
< V
DSS
DSS
; V
; I
DSS
G
F
D
D
GS
DS
DS
= .8 Ω
< 50 A; | di
= I
= 3 mA
DS
MOSFET
= 0 V; T
= 350 V; I
= 380 V
D90
= 0 V
T
C
C
VJ
VJ
F
= 25°C
= 25°C
/dt | < 200 A/µs
D
= 25°C
= 25°C
= 50 A
(T
VJ
NTC
= 25°C, unless otherwise specified)
K 3
K 2
min.
P 8
R 8
T 8
V 8
X 8
3.5
X 5
L 4
L 6
L 9
Characteristic Values
Maximum Ratings
typ.
220
25
00
60
55
30
95
0
E 0
F 0
K 0
max.
A
± 20
0.45
600
00
.8
5.5
38
25
70
25
6
V/ns
K/W
mΩ
mJ
µA
µA
nA
nC
nC
nC
ns
ns
ns
ns
V
V
A
A
V
J
I
V
R
Applications
• ECO-PAC 2 with DCB Base
• fast CoolMOS power MOSFET
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
) CoolMOS is a trademark of Infineon Technologies AG.
D25
- Electrical isolation towards the heatsink
- Low coupling capacitance to the
- High power dissipation
- High temperature cycling capability
- solderable pins for DCB mounting
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
- Low thermal resistance
DSS
DSon
heatsink for reduced EMI
of chip on DCB
inductive switching (UIS)
due to reduced chip thickness
= 38 A
= 600 V
= 70 mΩ
VKM 40-06P1
Pin arrangement see outlines
- 3
)
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VKM40-06P1 Summary of contents
Page 1
... 380 .8 Ω d(off per MOSFET thJC Data according ot IEC 60747 refer to a single diode or transistor unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © IXYS 2007 All rights reserved NTC Maximum Ratings /dt | < 200 A/µ 25° ...
Page 2
... ISOL ISOL M mounting torque (M4 Max. allowable acceleration Symbol Conditions d Creepage distance on surface S Strike distance in air d (pin to heatsink) A Weight © IXYS 2007 All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. 47 4 .2 580 23 73 900 Characteristic Values min. ...
Page 3
... Dimensions 0.0394") © IXYS 2007 All rights reserved VKM 40-06P1 ...