VMM650-01F IXYS, VMM650-01F Datasheet
VMM650-01F
Manufacturer Part Number
VMM650-01F
Description
MOSFET MOD PHASE LEG 100V Y3-LI
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.VMM650-01F.pdf
(2 pages)
Specifications of VMM650-01F
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 mOhm @ 500A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
680A
Vgs(th) (max) @ Id
4V @ 30mA
Gate Charge (qg) @ Vgs
1440nC @ 10V
Mounting Type
Chassis Mount
Package / Case
Y3-Li
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
680
Rds(on), Max, Tj = 25°c, (ohms)
2.2
Ciss, Typ, (pf)
-
Qg, Typ, (nc)
1440
Tf, Typ, (ns)
200
Tr, Typ, (ns)
250
Pd, (w)
-
Rthjc, Max, (c/w)
0.08
Package Style
Y3-Li (low inductance)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VMM650-01F
Manufacturer:
IXYS
Quantity:
11
Part Number:
VMM650-01F
Quantity:
83
Preliminary Data
Dual Power
HiPerFET
Phaseleg Configuration
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
t
R
R
①
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
MOSFET T1 + T2
D25
D80
F25
F80
DSS
GSS
d(on)
r
d(off)
f
rr
DSS
GS
GSth
F
DSon
thJC
thJS
g
gs
gd
additional current limitation by external leads
Conditions
T
T
T
(diode) T
(diode) T
Conditions
V
V
V
V
(diode) I
(diode) I
with heat transfer paste
VJ
C
C
GS
DS
DS
GS
= 25°C
= 80°C
= 25°C to 150°C
V
V
I
= 10 V; I
= 20 V; I
= 0.8 • V
= ±20 V; V
D
GS
GS
TM
= I
= 10 V; V
= 10 V; V
F
F
D80
C
C
= 650 A; V
= 650 A; -di/dt = 500 A/µs; V
= 25°C
= 80°C
; R
D
D
Module
DSS
= 30 mA
= I
G
DS
; V
= 0.47 Ω
D80
DS
DS
= 0 V
GS
= 75 V; I
= 0.5 • V
GS
= 0 V; T
①
①
①
①
= 0 V
T
D
DSS
VJ
VJ
= I
(T
;
= 25°C
= 125°C
D80
VJ
= 25°C, unless otherwise specified)
DS
= ½ V
min.
DSS
Characteristic Values
2
Maximum Ratings
1440
0.12
200
680
150
250
400
200
300
typ.
11
10
1.8
1.5
1.2
8
9
6
7
100
±20
680
500
680
500
max.
0.08 K/W
NTC
2.2 mΩ
1.5
4
1 mA
1
K/W
mA
nC
nC
nC
µA
ns
ns
ns
ns
ns
V
V
A
A
A
A
V
V
3
1
2
V
I
R
Features
• HiPerFET
• thermistor
• package
Applications
• converters with high power density for
D25
– low R
– unclamped inductive switching (UIS)
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
for internal temperature measurement
– low inductive current path
– screw connection to high current
– use of non interchangeable
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
– main and auxiliary AC drives of
– 4 quadrant DC drives
– power supplies
DSS
DS(on)
capability
main terminals
connectors for auxiliary terminals
possible
electric vehicles
DSon
= 100 V
= 680 A
= 1.8 mΩ Ω Ω Ω Ω
VMM 650-01F
TM
technology
1 - 2
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VMM650-01F Summary of contents
Page 1
... F t (diode 650 A; -di/dt = 500 A/µ thJC R with heat transfer paste thJS ① additional current limitation by external leads IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Maximum Ratings 100 ±20 ① 680 ① ...
Page 2
... Type ZY180R with wire length 350mm – for pins 7 (yellow wire) and 6 (red wire) – for pins 8 (yellow wire) and 9 (red wire) IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Characteristic Values min ...