IRKL56/04A Vishay, IRKL56/04A Datasheet - Page 2

• Manufacturer Part Number: IRKL56/04A
• Description: SCR DBL HISCR 400V 60A ADDAPAK
• Manufacturer: Vishay

Specifications of IRKL56/04A

• Structure: Series Connection - SCR/Diode
• Number Of Scrs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 400V
• Current - Gate Trigger (igt) (max): 150mA
• Current - On State (it (av)) (max): 60A
• Current - On State (it (rms)) (max): 135A
• Current - Non Rep. Surge 50, 60hz (itsm): 1310A, 1370A
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 2)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKL56/04A; IRKL56/04; IRKL56/04

2
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
I
I
I
I
or
I
I
I
V
r
V
V
di/dt
I
I
(1) I
(4) I >
T(AV)
F(AV)
O(RMS
TSM
FSM
2
2
L
t
H
T(TO)
TM
FM
t
t
IRK.41/ .56
Type number
2
t for time t
)
Parameters
Max. holding current
Max. average on-state
current (Thyristors)
Maximum average
forward current (Diodes)
Max. continuous RMS
on-state current.
As AC switch
Max. peak, one cycle
non-repetitive on-state
or forward current
Max. I
Max. I
Max. value of threshold
voltage (2)
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
Max. latching current
x I
AV
2
2
t for fusing
x
t for fusing (1)
=
I
2
t x t
x
Voltage
Code
04
06
08
10
12
14
16
-
(2) Average power
IRK.41
1.81
100
3.61
3.30
2.56
2.33
4.42
4.03
36.1
0.88
0.91
5.90
5.74
850
715
750
940
985
890
45
45
peak reverse voltage peak reverse voltage
V
RRM
150
400
200
repetitive
, maximum
1000
1200
1400
1600
400
600
800
V
=
IRK.56
V
10.05
1150
1450
1520
1310
1370
1100
1.54
135
8.56
7.82
6.05
5.53
9.60
85.6
0.85
0.88
3.53
3.41
T(TO)
60
60
x I
T(AV)
V
+
RSM
non-repetitive
r
KA
Units
KA
t
A/µs
m
mA
x (I
V
V
A
2
2
, maximum
1300
1500
1700
s
1100
500
700
900
T(RMS)
s
V
)
t=10ms No voltage
t=8.3ms reapplied
t=10ms T
t=8.3ms no voltage reapplied
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100% V
t=8.3ms reapplied
t=10ms T
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
Low level (3)
High level (4)
Low level (3)
High level (4)
I
I
T
I
t
T
resistive load, gate open circuit
T
t=8.3ms reapplied
t=10ms 100% V
2
180
T
TM
FM
TM
r
Conditions
J
J
J
< 0.5 µs, t
C
= 25
= 25
= 25
= x I
= x I
= x I
= 85
o
conduction, half sine wave,
o
o
o
C, anode supply = 6V,
C, anode supply = 6V,resistive load
o
C, from 0.67 V
(3) 16.7% x
T(AV)
F(AV)
C
peak off-state voltage,
T(AV)
V
DRM
J
J
p
gate open circuit
= 25
= 25
> 6 µs
I
,
(RMS)
I
g
, max. repetitive
o
o
C,
C,
RRM
RRM
= 500mA,
1000
1200
1400
1600
400
600
800
or
V
DRM
x I
AV
T
T
Initial T
T
Initial T
,
J
J
J
< I <
= T
= 25°C
= T
Sinusoidal
half wave,
www.irf.com
J
J
J
J
max
max
= T
= T
x I
AV
J
J
125°C
max.
max.
I
I
I
mA
RRM
DRM
15
(RMS)