VSKH250-04 Vishay, VSKH250-04 Datasheet - Page 8

SCR DBL LOSCR 400V 250A MAGNAPAK

VSKH250-04

Manufacturer Part Number
VSKH250-04
Description
SCR DBL LOSCR 400V 250A MAGNAPAK
Manufacturer
Vishay
Datasheet

Specifications of VSKH250-04

Structure
Series Connection - SCR/Diode
Number Of Scrs, Diodes
1 SCR, 1 Diode
Voltage - Off State
400V
Current - Gate Trigger (igt) (max)
200mA
Current - On State (it (av)) (max)
250A
Current - On State (it (rms)) (max)
555A
Current - Non Rep. Surge 50, 60hz (itsm)
8500A, 8900A
Current - Hold (ih) (max)
500mA
Mounting Type
Chassis Mount
Package / Case
3-MAGN-A-PAK™
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Holding Current (ih Max)
500 mA
Mounting Style
Screw
Breakover Current Ibo Max
8900 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
400 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKH250-04
IRKH250-04
IRKH250-04
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
www.vishay.com
8
10000
10000
1000
1000
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
100
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
0.5
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
1
1.5
Tj = 25°C
Tj = 130°C
2
2000
1800
1600
1400
1200
1000
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
800
600
400
200
2.5
For technical questions within your region, please contact one of the following:
0
0
VSK.170 Series
Per Junction
3
VSK.250 Series
Per Junction
100
3.5
Total Output Current (A)
Tj = 25°C
Tj = 130°C
(MAGN-A-PAK Power Modules), 170 A/250 A
200
4
4.5
Fig. 18 - On-State Power Loss Characteristics
300
(Rect)
Three Phase Bridge
120°
5
3 x VSK.250.. Series
400
Connected
T
J
SCR/SCR and SCR/Diode
= 130°C
500
600
700
0
Maximum Allowable Ambient Temperature (°C)
20
40
Fig. 21 - Reverse Recovery Charge Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
1800
1600
1400
1200
1000
2400
2200
2000
1800
1600
1400
1200
1000
DiodesEurope@vishay.com
800
600
400
200
800
600
400
200
Rate Of Fall Of On-state Current - di/dt (A/µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
60
0
0
T
Per Junction
VSK.170.. Series
T
Per Junction
VSK.250.. Series
T
Per Junction
J
J
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
J
= 130 °C
= 130 °C
80
= 130 °C
100
120
I
TM
I
TM
= 800 A
Document Number: 94417
= 800 A
500 A
300 A
200 A
100 A
500 A
50 A
300 A
200 A
100 A
50 A
Revision: 02-Jul-10

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