VSKT250-12 Vishay, VSKT250-12 Datasheet - Page 10

• Manufacturer Part Number: VSKT250-12
• Description: SCR DBL HISCR 1200V 230A MAGNPAK
• Manufacturer: Vishay

Specifications of VSKT250-12

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 250A
• Current - On State (it (rms)) (max): 555A
• Current - Non Rep. Surge 50, 60hz (itsm): 8500A, 8900A
• Current - Hold (ih) (max): 500mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8900 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKT250-12; IRKT250-12; IRKT250-12

VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
www.vishay.com
10
Fig. 30 - Maximum Non-Repetitive Surge Current
Fig. 31 - Maximum Non-Repetitive Surge Current
10000
10000
9000
8000
7000
6000
5000
4000
3000
2000
9000
8000
7000
6000
5000
4000
3000
2000
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
0.01
1
At Any Ra ted Load Condition And With
Ma ximum Non Rep etitive Surge Current
VSK.320.. Series
Per Junc tion
Rated V
VSK.320.. S eries
Per Junc tio n
Pulse T rain Dura tion (s)
R RM
Versus Pulse T rain Dura tion.
[e-mail], [e-mail],
2800
2400
2000
1600
1200
Rated V
No Vo ltage Reap plied
App lied Following S urge.
800
400
For technical questions within your region, please contact one of the following:
0.1
0
10
0
Initial T = 150°C
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
R RM
200
Reap plied
T otal Output Current (A)
J
J
Standard Recovery Diodes, 250 A to 320 A
400
Fig. 29 - Forward Power Loss Characteristics
100
1
(Rec t)
(MAGN-A-PAK Power Modules)
3 x VSK.320.. Series
T hree Phase Bridge
120°
600
Connected
T = 150°C
J
800
1000
0
Maximum Allowable Ambient T emperature (°C)
25
50
Fig. 33 - Thermal Impedance Z
10000
0.001
Fig. 32 - Forward Voltage Drop Characteristics
[e-mail]
1000
0.01
100
0.1
75
0.001
1
0.5
S teady S tate Value:
R
(DC Operation)
Instantaneous Forward Voltage (V)
thJC
100
T = 25°C
S quare Wave Pulse Duration (s )
1
J
0.01
= 0.45 K/ W
125
1.5
0.1
2
150
VSK.320.. S eries
Per Junc tion
VSK.320.. S eries
Per Junction
2.5
1
thJC
Document Number: 93581
T = 150°C
3
J
10
Characteristics
3.5
Revision: 02-Jul-10
100
4