■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Electrical and Optical Characteristics (Ta = 25 C)
94
8.5 0.1
A
K
C
E
Emitter
Detector
Rising time
Falling time
K
A
Terminal No.
Photomicrosensor (Transmissive)
EE-SX198
Cross section BB
Internal Circuit
Be sure to read Precautions on page 25.
5 0.1
EE-SX198
0.5 0.1
Cathode
Collector
Emitter
10 0.2
6.2 0.5
Anode
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Name
Item
C
E
Unless otherwise specified,
the tolerances are 0.2 mm.
Four, C0.3
12.2 0.3
9.2 0.3
Photomicrosensor (Transmissive)
Four, 0.25 0.1
Optical
axis
6.5+0.1
Cross section AA
V
I
I
I
I
V
tr
tf
R
L
D
LEAK
P
P
Two, C1 0.3
F
CE
Symbol
(sat)
Four, 0.5 0.1
2.5 0.1
1.2 V typ., 1.4 V max.
0.01 A typ., 10 A max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 s typ.
4 s typ.
■ Features
• General-purpose model with a 3-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25 C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
Emitter
Detector
Ambient tem-
perature
Soldering temperature
2. The pulse width is 10
3. Complete soldering within 10 seconds.
ature exceeds 25 C.
100 Hz.
Value
Item
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Operating
Storage
I
V
I
I
V
---
I
V
V
V
F
F
F
F
R
CE
CE
CC
CC
= 30 mA
= 20 mA
= 20 mA, V
= 40 mA, I
s maximum with a frequency of
= 4 V
= 20 V, 0 lx
= 10 V
= 5 V, R
= 5 V, R
I
I
V
V
V
I
P
Topr
Tstg
Tsol
F
FP
C
Symbol
R
CEO
ECO
C
L
L
L
Condition
CE
= 0.5 mA
= 100
= 100
= 5 V
50 mA
(see note 1)
1 A
(see note 2)
4 V
30 V
---
20 mA
100 mW
(see note 1)
–25 C to 85 C
–30 C to
100 C
260 C
(see note 3)
, I
, I
Rated value
L
L
= 5 mA
= 5 mA