CNB13020R Panasonic - SSG, CNB13020R Datasheet

SENSOR OPTO TRANS 1MM REFL AXIAL

CNB13020R

Manufacturer Part Number
CNB13020R
Description
SENSOR OPTO TRANS 1MM REFL AXIAL
Manufacturer
Panasonic - SSG
Datasheet

Specifications of CNB13020R

Sensing Distance
0.039" (1mm)
Sensing Method
Reflective
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
20mA
Current - Dc Forward (if)
50mA
Output Type
Phototransistor
Response Time
20µs, 20µs
Mounting Type
Through Hole
Package / Case
Axial
Operating Temperature
-25°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ON2170-R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CNB13020R8
Manufacturer:
Panasonic
Quantity:
11 530
Part Number:
CNB13020R8
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
CNB13020R8HT
Manufacturer:
PANASONIC
Quantity:
6 850
Reflective Photosensors (Photo Reflectors)
CNB1302
Reflective Photosensor
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Si phototransistor in a single resin package.
Input (Light
emitting diode)
Output (Photo Collector to emitter voltage
transistor)
Temperature
Input
characteristics
Output characteristics Collector cutoff current
Transfer
characteristics Response time
*1
*3
*4
I
Time required for the output current to increase from 10% to 90% of its final value
Time required for the output current to decrease from 90% to 10% of its initial value
CNB1302 is a small, thin reflective photosensor consisting of a
Ultraminiature, thin type : 2.7
Visible light cutoff resin is used
Fast response : t
Easy interface for control circuit
Applications
Control of motor and other rotary units
Detection of position and edge
Detection of paper, film and cloth
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Overview
Features
Electrical Characteristics (Ta = 25˚C)
C
classifications
I
C
Class
( A)
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals
Collector current
Leakage current
Collector to emitter saturation voltage V
Paramwter
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
r
90 to 220
, t
f
Q
= 20 s (typ.)
180 to 440
3.4 mm (height : 1.5 mm)
R
t
Symbol
Symbol Ratings
I
r
*3
C
V
V
I
P
CE(sat)
P
T
T
V
CEO
*1, *2
V
I
C
I
I
I
D
CEO
ECO
, t
C
R
D
opr
stg
F
C
F
t
R
*2
*1
f
*4
–30 to +100
I
V
V
V
V
V
V
I
–25 to +85
F
F
CC
R
R
CE
CC
CC
360 to 880
= 50mA
= 20mA, I
= 3V
= 0V, f = 1MHz
= 5V, I
50
75
20
30
50
= 10V
= 5V, I
= 5V, I
3
5
S
F
= 10mA, R
Conditions
F
C
C
= 10mA, R
= 0.1mA, R
Unit
mW
mW
= 0.1mA
mA
mA
˚C
˚C
V
V
V
L
= 100 , d = 1mm
L
L
= 100
= 100
*1
*2
Input power derating ratio is
1.0 mW/˚C at Ta
Output power derating ratio is
0.67 mW/˚C at Ta
*2
Output current measurement method
Mark for indicating
anode side
C0.5
I
F
4-0.5
4-0.7
0.1
min
2
90
3.4 0.3
1
1.8
3
4
0.01
typ
1.3
Chip
30
20
25˚C.
center
25˚C.
V
CC
1
I
max
C
200
880
200
0.15
1.5
0.4
10
Pin connection
0.5
R
2
Evaporated Al
Glass plate
(t = 1mm)
L
3
Unit : mm
Unit
nA
nA
pF
V
V
A
A
4
s
1

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CNB13020R Summary of contents

Page 1

Reflective Photosensors (Photo Reflectors) CNB1302 Reflective Photosensor Overview CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package. Features ...

Page 2

CNB1302 — – 100 Ambient temperature Ta (˚ — 800 V = ...

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