EE-SY113 Omron, EE-SY113 Datasheet
EE-SY113
Manufacturer Part Number
EE-SY113
Description
SENSOR OPTO TRANS 4.4MM REFL PCB
Manufacturer
Omron
Datasheet
1.EE-SY113.pdf
(2 pages)
Specifications of EE-SY113
Sensing Distance
0.173" (4.4mm)
Sensing Method
Reflective
Voltage - Collector Emitter Breakdown (max)
30V
Current - Collector (ic) (max)
20mA
Current - Dc Forward (if)
50mA
Output Type
Phototransistor
Response Time
30µs, 30µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-40°C ~ 80°C
Termination Style
Solder Pin
No. Of Channels
1
Input Current
30mA
Output Voltage
30V
Opto Case Style
Through Hole
No. Of Pins
4
Svhc
No SVHC (15-Dec-2010)
External Depth
6.2mm
External Length / Height
8.4mm
External Width
15.2mm
Optocoupler Output Type
Phototransistor
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
EE-SY113
EESY113
Z3024
EESY113
Z3024
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EE-SY113
Manufacturer:
BOSCH
Quantity:
30 000
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Electrical and Optical Characteristics (Ta = 25 C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
152
Emitter
Detector
Rising time
Falling time
A
K
C
E
A
K
Terminal No.
Photomicrosensor (Reflective)
EE-SY113
Internal Circuit
Be sure to read Precautions on page 25.
EE-SY113
Four, 0.5
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Anode
Cathode
Collector
Emitter
Name
Item
C
E
Unless otherwise specified, the
tolerances are as shown below.
3 mm max.
3
6
10
18
Dimensions
Photomicrosensor (Reflective)
mm
mm
mm
mm
15 to 18
6
10
18
30
Notch for directional discrimination
Tolerance
V
I
I
I
I
V
tr
tf
0.3
0.375
0.45
0.55
0.65
R
L
D
LEAK
P
P
F
CE
Symbol
2.5
(sat)
Four, 0.25
1.2 V typ., 1.5 V max.
0.01 A typ., 10 A max.
940 nm typ.
160 A min., 1,600 A max.
2 nA typ., 200 nA max.
2 A max.
---
850 nm typ.
30 s typ.
30 s typ.
■ Features
• Compact reflective Photomicrosensor (EE-SY110) with a molded
■ Absolute Maximum Ratings (Ta = 25 C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
housing and a dust-tight cover.
Emitter
Detector
Ambient tem-
perature
Soldering temperature
2. The pulse width is 10
3. Complete soldering within 10 seconds.
Value
ature exceeds 25 C.
100 Hz.
Item
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Operating
Storage
I
V
I
I
White paper with a reflection ratio of
90%, d = 4.4 mm (see note)
V
I
tion
---
V
V
V
F
F
F
F
R
CE
CE
CC
CC
= 30 mA
= 20 mA
= 20 mA, V
= 20 mA, V
= 4 V
= 10 V, 0 lx
= 10 V
= 5 V, R
= 5 V, R
s maximum with a frequency of
I
I
V
V
V
I
P
Topr
Tstg
Tsol
F
FP
C
Symbol
R
CEO
ECO
C
L
L
Condition
CE
CE
= 1 k , I
= 1 k , I
= 10 V with no reflec-
= 10 V
50 mA
(see note 1)
1 A
(see note 2)
4 V
30 V
---
20 mA
100 mW
(see note 1)
–40 C to 80 C
–40 C to 85 C
260 C
(see note 3)
L
L
Rated value
= 1 mA
= 1 mA
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EE-SY113 Summary of contents
Page 1
... Rising time Falling time Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 152 EE-SY113 Photomicrosensor (Reflective) ■ Features • Compact reflective Photomicrosensor (EE-SY110) with a molded housing and a dust-tight cover. ■ Absolute Maximum Ratings ( ...
Page 2
... Sensing Position Characteristics (Typical 4 Sensing object: White paper with a reflection factor of 90 Direction d 2 Distance d (mm) 2 EE-SY113 Light Current vs. Collector Emitter Voltage Characteristics (Typical 4.4 mm Sensing object: White paper with a reflection F factor of 90 Collector Emitter voltage V (V) CE Response Time vs. Load Resistance Characteristics ...