NTMFS4899NFT3G ON Semiconductor, NTMFS4899NFT3G Datasheet

NTMFS4899NFT3G

Manufacturer Part Number

NTMFS4899NFT3G

Description

NFET SO8FL 30V 75A 5MO DFN5

Manufacturer

ON Semiconductor

Datasheet

1.NTMFS4899NFT1G.pdf (6 pages)

Specifications of NTMFS4899NFT3G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

10.4A

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

25nC @ 10V

Input Capacitance (ciss) @ Vds

1600pF @ 12V

Power - Max

920mW

Mounting Type

Surface Mount

Package / Case

5-DFN, SO8 FL

Lead Free Status / RoHS Status

Lead free / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMFS4899NFT3G

Manufacturer:

Quantity:

5 000

Current page: 1 of 6
Download datasheet (106Kb)

NTMFS4899NF

Power MOSFET

30 V, 75 A, Single N−Channel, SO−8 FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

March, 2010 − Rev. 0

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

10 sec

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current limited by package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (V

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Compliant

Integrated Schottky Diode

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery

DC−DC Converters

Low Side Switching

qJA

qJA,

qJA

qJC

= 41 A

(Note 1)

(Note 2)

(Note 1)

t v 10 sec

DS(on)

qJA

qJC

, L = 0.1 mH, R

= 50 V, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 10 V,

= 25 W)

= 25°C unless otherwise stated)

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

Dmaxpkg

dV/dt

EAS

DSS

STG

−55 to

Value

+150

17.8

12.9

2.70

29.1

7.18

10.4

0.92

±20

188

260

7.5

V/ns

Unit

°C

*For additional information on our Pb−Free strategy

†For information on tape and reel specifications,

NTMFS4899NFT1G

NTMFS4899NFT3G

SO−8 FLAT LEAD

and soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 488AA

(BR)DSS

(Note: Microdot may be in either location)

30 V

STYLE 1

Device

ORDERING INFORMATION

N−CHANNEL MOSFET

http://onsemi.com

7.5 mW @ 4.5 V

5.0 mW @ 10 V

= Assembly Location

= Year

= Work Week

= Pb−Free Package

DS(ON)

(Pb−Free)

Package

SO−8FL

Publication Order Number:

MAX

MARKING

DIAGRAM

NTMFS4899NF/D

4899NF

AYWWG

Tape & Reel

Shipping

1500 /

5000 /

75 A

MAX

†

Related parts for NTMFS4899NFT3G

NTMFS4899NFT3G Summary of contents

Page 1

... J NTMFS4899NFT1G T +150 STG dV/dt 6 V/ns NTMFS4899NFT3G EAS 84 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please T 260 °C refer to our Tape and Reel Packaging Specifications L Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain ...

Page 4

4.6 V 160 4.8 V 140 5 V 120 6 V 100 0.5 1 1 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure ...

Page 5

C iss 1600 1400 1200 1000 800 600 C oss 400 C rss 200 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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